铁电纳米点中涡旋畴结构的可控性：丰富的畴模式和转变路径。

Controllability of vortex domain structure in ferroelectric nanodot: fruitful domain patterns and transformation paths.

机构信息

State Key Laboratory of Optoelectronic Materials and Technologies, Micro&Nano Physics and Mechanics Research Laboratory, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China.

1] State Key Laboratory of Optoelectronic Materials and Technologies, Micro&Nano Physics and Mechanics Research Laboratory, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China [2] Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China.

出版信息

Sci Rep. 2014 Feb 4;4:3946. doi: 10.1038/srep03946.

DOI:10.1038/srep03946

PMID:24492764

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3912473/

Abstract

Ferroelectric vortex domain structure which exists in low-dimensional ferroelectrics is being intensively researched for future applications in functional nanodevices. Here we demonstrate that adjusting surface charge screening in combination with temperature can provide an efficient way to gain control of vortex domain structure in ferroelectric nanodot. Systematical simulating experiments have been conducted to reveal the stability and evolution mechanisms of domain structure in ferroelectric nanodot under various conditions, including processes of cooling-down/heating-up under different surface charge screening conditions, and increasing/decreasing surface charge screening at different temperatures. Fruitful phase diagrams as functions of surface screening and temperature are presented, together with evolution paths of various domain patterns. Calculations discover up to 25 different kinds of domain patterns and 22 typical evolution paths of phase transitions. The fruitful controllability of vortex domain structure by surface charge screening in combination with temperature should shed light on prospective nanodevice applications of low-dimensional ferroelectric nanostructures.

摘要

铁电涡旋畴结构存在于低维铁电体中，目前正在被深入研究，以期在功能纳米器件中有实际应用。在这里，我们证明了通过调整表面电荷屏蔽和温度的组合可以有效地控制铁电纳米点中的涡旋畴结构。我们进行了系统的模拟实验，揭示了在不同条件下，包括在不同表面电荷屏蔽条件下冷却/加热的过程，以及在不同温度下增加/减少表面电荷屏蔽时，铁电纳米点中畴结构的稳定性和演化机制。我们给出了作为表面屏蔽和温度函数的丰富相图，以及各种畴图案的演化路径。计算发现了多达 25 种不同的畴图案和 22 种典型的相变演化路径。表面电荷屏蔽和温度的协同控制应该会对低维铁电纳米结构的有前景的纳米器件应用产生影响。