Department of Advanced Materials Science, Faculty of Engineering, Kagawa University , Hayashi-cho 2217-20, Takamatsu 761-0396, Japan.
ACS Appl Mater Interfaces. 2014 Feb 26;6(4):2759-63. doi: 10.1021/am4052766. Epub 2014 Feb 6.
Increasing resistivity of electrically conductive nonoxide ceramics was investigated by insulating conductive pathways through conductive grains in a sintered body by addition of an insulating grain boundary phase, which was produced by the reaction of sintering additives in liquid phase sintering. When SiC was hot pressed with an additive of 10 vol % of Al2O3 and Y2O3, the resistivity decreased as sintering temperature increased owing to contact between SiC grains during densification. However, by hot pressing at 1750°C, a high resistivity of greater than 1 × 10(11) Ω cm was achieved because of the penetration of an insulating grain boundary phase between the SiC grains. It is possible to fabricate high-resistivity SiC ceramics without losing their excellent mechanical properties by introduction of an insulating grain boundary phase, the volume of which is approximately 1/7 that of the insulating phase incorporated in conventional ceramic composites.
通过在烧结体中添加绝缘晶界相来绝缘导电颗粒中的导电途径,从而提高导电非氧化物陶瓷的电阻率,该绝缘晶界相是通过液相烧结中烧结添加剂的反应产生的。当 SiC 与 10 体积%的 Al2O3 和 Y2O3 的添加剂进行热压时,由于在致密化过程中 SiC 颗粒之间的接触,电阻率随着烧结温度的升高而降低。然而,通过在 1750°C 下热压,可以获得大于 1×10(11) Ω cm 的高电阻率,这是因为 SiC 颗粒之间渗透了绝缘晶界相。通过引入绝缘晶界相,可以在不损失其优异机械性能的情况下制造高电阻率 SiC 陶瓷,其体积约为传统陶瓷复合材料中所含绝缘相的 1/7。