Polymer Science and Engineering Department, University of Massachusetts , Amherst, Massachusetts 01003, United States.
Langmuir. 2014 Mar 11;30(9):2419-28. doi: 10.1021/la5000149. Epub 2014 Feb 24.
Chemically patterned surfaces containing hydrophilic features on a hydrophobic background have been used by a number of groups to deposit arrays of particles/crystals/substances by dip-coating deposition. In this technique, a substrate is simply withdrawn from a solution (or dispersion) of the desired substance, the solution dewets from the hydrophobic region and wets the hydrophilic features, and the particles/crystals/substances deposit on the hydrophilic features after solvent evaporation. An apparently similar approach, recently described by several groups, involves dip-coating deposition of substances from solutions onto hydrophobic topographic features (arrays of posts on superhydrophobic surfaces) that are separated by air. We report results of dip-coating deposition using chemically patterned surfaces and compare them directly with results from post-containing superhydrophobic surfaces. This comparison involves the analysis of events at receding three-phase contact lines; these events differ significantly in the two approaches with the key difference being tensile (normal to the surface) versus sessile (parallel to the surface) capillary bridge failure. Tensile failure occurs with the post-containing superhydrophobic surfaces and sessile failure with chemically patterned surfaces. The solvent evaporation stages of the processes, that occur subsequent to the capillary bridge failure events, also vary significantly in the two approaches and depend on the receding contact angles of the hydrophobic post tops and the hydrophilic chemically patterned features. These differences, as the adjectives suggest, are pronounced. Controlling the evaporation rate (adjusting the vaporization/condensation equilibrium) by raising the partial pressure of the solvent is identified as a useful variable for chemically patterned surfaces.
化学图案化表面含有亲水区和疏水区,许多研究小组已经利用这种表面,通过浸涂沉积法来沉积粒子/晶体/物质的阵列。在这种技术中,只需将基底从所需物质的溶液(或分散体)中取出,疏水区的溶液会失去水分并润湿亲水区,然后在溶剂蒸发后,粒子/晶体/物质会沉积在亲水区。最近,几个研究小组描述了一种类似的方法,涉及从溶液中通过浸涂沉积将物质沉积到疏水区的形貌特征(超疏水表面上的柱阵列)上,这些特征之间由空气隔开。我们报告了使用化学图案化表面进行浸涂沉积的结果,并将其与含有柱状的超疏水表面的结果直接进行比较。这种比较涉及到对后退三相接触线处事件的分析;这两种方法中的事件有显著差异,关键区别在于拉伸(垂直于表面)与静止(平行于表面)的毛细桥断裂。在含有柱状的超疏水表面中,会发生拉伸断裂,而在化学图案化表面中,会发生静止断裂。在毛细桥断裂事件之后,这两个过程的溶剂蒸发阶段也有很大的不同,这取决于疏水柱状顶部和亲水化学图案化特征的后退接触角。正如形容词所暗示的那样,这些差异非常显著。通过提高溶剂的分压来控制蒸发速率(调节蒸发/冷凝平衡),被确定为化学图案化表面的一个有用变量。