Center for Nanoscale Characterization and Devices, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China; Department of Physics, Arizona State University, Tempe, Arizona, 85287-1504, USA.
Adv Mater. 2014 Feb;26(7):1052-7. doi: 10.1002/adma.201304021. Epub 2013 Nov 4.
Polarization fields within InAs nanopillars with zincblende(ZB)/wurtzite(WZ) polytype stacking are quantified. The displacement of charged ions inside individual tetrahedra of WZ regions is measured at the atomic scale. The variations of spontaneous polarization along the interface normal are related to strain at interfaces of different polytypes. Thus, direct correlation between local atomic structure and electric properties is demonstrated.
对具有闪锌矿（ZB）/纤锌矿（WZ）多型堆叠的 InAs 纳米柱内的极化场进行了量化。在原子尺度上测量了 WZ 区域中单个四面体内部带电离子的位移。自发极化沿着界面法向的变化与不同多型界面处的应变有关。因此，证明了局部原子结构和电性能之间的直接相关性。
