Department of Chemical Engineering and Conn Center for Renewable Energy Research, University of Louisville, Louisville, KY, USA.
Adv Mater. 2014 May;26(18):2878-82. doi: 10.1002/adma.201305083. Epub 2014 Feb 17.
A novel visible-light-absorbing dilute alloy, Ga(Sbx)N1-x is synthesized by metal organic chemical vapor deposition (MOCVD) for solar hydrogen production. Significant bandgap reduction of GaN, from 3.4 eV to 1.8 eV, is observed, with a low (2%) incorporation of antimonide, and the lattice expansion is in agreement with our first-principles calculations. The band edges of Ga(Sbx)N1-x are found to straddle the water redox potentials showing excellent suitability for solar water splitting.
采用金属有机化学气相沉积法(MOCVD)合成了一种新型的可见光吸收稀合金 Ga(Sbx)N1-x,用于太阳能制氢。观察到 GaN 的能带隙从 3.4eV 显著降低到 1.8eV,同时仅掺入了低浓度(2%)的 Sb,晶格膨胀与我们的第一性原理计算结果一致。Ga(Sbx)N1-x 的能带边缘跨越水的氧化还原电位,表现出极好的太阳能分解水的适用性。