Facet cutting and hydrogenation of In(2)O(3) nanowires for enhanced photoelectrochemical water splitting.

Semiconductor nanowires (NWs) are useful building blocks in optoelectronic, sensing, and energy devices and one-dimensional NWs have been used in photoelectrochemical (PEC) water splitting because of the enhanced light absorption and charge transport. It has been theoretically predicted that the {001} facets of body center cubic (bcc) In2O3 nanocrystals can effectively accumulate photogenerated holes under illumination, but it is unclear whether facet cutting of NWs can enhance the efficiency of PEC water splitting. In this work, the photocurrent of square In2O3 NWs with four {001} facets is observed to be an order of magnitude larger than that of cylindrical In2O3 NWs under the same conditions and subsequent hydrogen treatment further promotes the PEC water splitting performance of the NWs. The optimized hydrogenated In2O3 NWs yield a photocurrent density of 1.2 mA/cm(2) at 0.22 V versus Ag/AgCl with a Faradaic efficiency of about 84.4%. The enhanced PEC properties can be attributed to the reduced band gap due to merging of the disordered layer-induced band tail states with the valence band as well as improved separation of the photogenerated electrons/holes between the In2O3 crystal core and disordered layer interface. The results provide experimental evidence of the important role of facet cutting, which is promising in the design and fabrication of NW-based photoelectric devices.