Wang Fei, Yang Bin, Liu Dachun, Ma Wenhui, Chen Xiumin, Dai Yongnian
National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming 650093, People's Republic of China; Key Laboratory for Nonferrous Vacuum Metallurgy of Yunnan Province, Kunming,Yunnan 650093, People's Republic of China; State Key Laboratory Breeding Base of Complex Nonferrous Metal Resources Clear Utilization in Yunnan Province, Kunming,Yunnan 650093, People's Republic of China.
National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming 650093, People's Republic of China; Key Laboratory for Nonferrous Vacuum Metallurgy of Yunnan Province, Kunming,Yunnan 650093, People's Republic of China; State Key Laboratory Breeding Base of Complex Nonferrous Metal Resources Clear Utilization in Yunnan Province, Kunming,Yunnan 650093, People's Republic of China.
Spectrochim Acta A Mol Biomol Spectrosc. 2014 May 21;126:46-52. doi: 10.1016/j.saa.2014.01.102. Epub 2014 Feb 12.
As a novel red long afterglow phosphor, Si(4+) and Ti(4+) ion codoped Gd2O2S:Eu phosphor with spherical morphology, sub-micrometer size and narrow particle size distribution was synthesized by solid-state reaction in vacuum. The vacuum synthesis mechanism was determined by thermal analysis. The crystal structure, luminescence properties and mechanisms were investigated respectively by XRD, SEM and fluorescence spectrophotometer. The results show that well-crystallized Gd2O2S:Eu,Si,Ti phosphors are of hexagonal structure which is in agreement with the standard powder peak positions of Gd2O2S hexagonal phase. It displays pure red emission because of the strongest peaks at 627nm and 617nm which are attributed to energy transfer ((5)D0-(7)F2). There is a little blue shift of charge transfer excitation band in the excitation spectra between the bulk and sub-micrometer-sized samples, which may stem from size dependent shift and different lattice distortion in the position of the Eu(3+)-ligand electron transfer absorption/excitation band. To further study the influence of the impurities in Gd2O2S:Eu crystals on crystal growth, the simulated crystal face and its XRD patterns were illustrated. The preferred orientation of crystal growth changed from crystal face (101) to (100) thus to result in different luminescence mechanisms.
作为一种新型红色长余辉荧光粉,通过真空固态反应合成了具有球形形貌、亚微米尺寸和窄粒度分布的Si(4+)和Ti(4+)离子共掺杂Gd2O2S:Eu荧光粉。通过热分析确定了真空合成机理。分别利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和荧光分光光度计研究了其晶体结构、发光性能及发光机理。结果表明,结晶良好的Gd2O2S:Eu,Si,Ti荧光粉为六方结构,与Gd2O2S六方相的标准粉末峰位置一致。由于在627nm和617nm处的最强峰归因于能量转移((5)D0-(7)F2),其呈现出纯红色发射。在激发光谱中,块状样品和亚微米尺寸样品之间的电荷转移激发带存在轻微蓝移,这可能源于尺寸依赖的位移以及Eu(3+)-配体电子转移吸收/激发带位置的不同晶格畸变。为了进一步研究Gd2O2S:Eu晶体中的杂质对晶体生长的影响,给出了模拟晶面及其XRD图谱。晶体生长的择优取向从晶面(101)变为(100),从而导致不同的发光机理。