Institut für Materialwissenschaft, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, D-64287 Darmstadt, Germany.
J Phys Condens Matter. 2014 Mar 19;26(11):115801. doi: 10.1088/0953-8984/26/11/115801. Epub 2014 Mar 3.
Matsuoka-type zinc oxide (ZnO) varistor material was synthesized using a conventional solid-state reaction method. X-band electron paramagnetic resonance (EPR) data revealed that Mn ions substitute in the ZnO lattice with a 2+ paramagnetic state. Co ions with either 3+ or 2+ oxidation states are only detectable at cryogenic temperatures. A Cr(3+) EPR signal was strongly suppressed or masked by a Mn(2+) signal. Photoluminescence and electrical results indicated that the varistor sample has fewer intrinsic defects and much higher resistivity as compared to undoped and metal-ion doped ZnO.
采用传统的固态反应法合成了松岗型氧化锌(ZnO)压敏电阻材料。X 波段电子顺磁共振(EPR)数据表明,Mn 离子以 2+ 顺磁态取代 ZnO 晶格。只有在低温下才能检测到具有 3+ 或 2+ 氧化态的 Co 离子。Cr(3+) EPR 信号被 Mn(2+)信号强烈抑制或屏蔽。光致发光和电学结果表明,与未掺杂和金属离子掺杂的 ZnO 相比,压敏电阻样品具有更少的本征缺陷和更高的电阻率。