Wang Aiji, Chen Tingfang, Lu Shuhua, Wu Zhenglong, Li Yongliang, Chen He, Wang Yinshu
Department of Physics, Beijing Normal University, Beijing, 100875 China.
Department of Physics, Beijing Normal University, Beijing, 100875 China ; School of Police Information Engineering, People's Public Security University of China, Beijing, 100038 China.
Nanoscale Res Lett. 2015 Feb 18;10:75. doi: 10.1186/s11671-015-0801-y. eCollection 2015.
Undoped and Al-doped ZnO films were synthesized by atomic layer deposition at 150°C and then annealed at 350°C in different atmospheres. Effects of doping and annealing on the film growth mode and properties were investigated. The undoped film has strong UV emission and weak Zn interstitial emission. Annealing introduces O vacancies, decreases Zn interstitials, and results in weakening and blue-shifting of the UV emission which is sensitive to annealing atmosphere. Al doping induces the film growing with its c-axis parallel to the substrate surface. It also introduces non-radiative centers and weakens the UV emission. Al doping widens the film bandgap, which has a quadratic dependence on Al content. Al doping decreases the film resistivity to 5.3 × 10(-3) Ω · cm. Annealing has little effect on photoluminescence of the doped films, but it degrades undoped and doped ZnO film conductivity dramatically; and the degradation depends on the annealing ambient.
通过原子层沉积在150°C合成未掺杂和铝掺杂的ZnO薄膜，然后在350°C于不同气氛中退火。研究了掺杂和退火对薄膜生长模式及性能的影响。未掺杂薄膜具有强烈的紫外发射和微弱的锌间隙发射。退火引入氧空位，减少锌间隙，导致紫外发射减弱并蓝移，且紫外发射对退火气氛敏感。铝掺杂促使薄膜以其c轴平行于衬底表面生长。它还引入非辐射中心并减弱紫外发射。铝掺杂拓宽了薄膜带隙，带隙与铝含量呈二次依赖关系。铝掺杂使薄膜电阻率降低至5.3×10(-3)Ω·cm。退火对掺杂薄膜的光致发光影响不大，但会显著降低未掺杂和掺杂ZnO薄膜的电导率；且电导率的降低取决于退火环境。
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