Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, MA 02138 (USA).
Angew Chem Int Ed Engl. 2014 Apr 7;53(15):3889-93. doi: 10.1002/anie.201308472. Epub 2014 Mar 5.
This paper compares rates of charge transport by tunneling across junctions with the structures Ag(TS) X(CH2 )2n CH3 //Ga2 O3 /EGaIn (n=1-8 and X= SCH2 and O2 C); here Ag(TS) is template-stripped silver, and EGaIn is the eutectic alloy of gallium and indium. Its objective was to compare the tunneling decay coefficient (β, Å(-1) ) and the injection current (J0 , A cm(-2) ) of the junctions comprising SAMs of n-alkanethiolates and n-alkanoates. Replacing Ag(TS) SCH2 -R with Ag(TS) O2 C-R (R=alkyl chains) had no significant influence on J0 (ca. 3×10(3) A cm(-2) ) or β (0.75-0.79 Å(-1) )-an indication that such changes (both structural and electronic) in the Ag(TS) XR interface do not influence the rate of charge transport. A comparison of junctions comprising oligo(phenylene)carboxylates and n-alkanoates showed, as expected, that β for aliphatic (0.79 Å(-1) ) and aromatic (0.60 Å(-1) ) SAMs differed significantly.
本文比较了具有 Ag(TS) X(CH2 )2n CH3 //Ga2 O3 /EGaIn 结构的隧穿结的电荷传输速率，其中 X= SCH2 和 O2 C，n=1-8；Ag(TS) 是模板剥离的银，EGaIn 是镓和铟的共晶合金。其目的是比较由 n-巯基烷和 n-烷酸组成的 SAMs 的隧穿衰减系数（β，Å(-1) ）和注入电流（J0 ，A cm(-2) ）。用 Ag(TS) O2 C-R（R=烷基链）取代 Ag(TS) SCH2 -R 对 J0（约 3×10(3) A cm(-2) ）或 β（0.75-0.79 Å(-1) ）没有显著影响，这表明 Ag(TS) XR 界面的这种变化（结构和电子）不会影响电荷传输速率。比较包含聚（苯撑）羧酸酯和 n-烷酸的结，如预期的那样，β 对于脂肪族（0.79 Å(-1) ）和芳香族（0.60 Å(-1) ）SAM 有显著差异。
