In situ determination of misorientation angle of grain boundary by field ion microscopy analysis.

We proposed an advanced analysis technique for characterizing a grain boundary using field ion microscopy (FIM) for atom probe analysis. The technique enables quick and precise estimation of the misorientation angle of the grain boundary by matching the calculated crystallographic pole positions with the actual FIM image including the grain boundary. We investigated the accuracy in estimation of the misorientation angle using target grain boundaries which had been analyzed by electron backscatter diffraction pattern (EBSD) analysis. From the comparison between EBSD and FIM analyses, we found that the technique enables the determination of the misorientation angle with a high accuracy of ± 0.4°, which is comparable with that achieved by EBSD.