CNR-ISMN , Bologna Via P. Gobetti 101, 40129 Bologna (BO), Italy.
Nano Lett. 2014;14(4):1695-700. doi: 10.1021/nl402603c. Epub 2014 Mar 20.
A novel method for mapping the charge density spatial distribution in organic field-effect transistors based on the electromodulation of the photoluminescence is demonstrated. In field-effect transistors exciton quenching is dominated by exciton-charge carrier interaction so that it can be used to map the charge distribution in different operating conditions. From a quantitative analysis of the photoluminescence quenching, the thickness of the charge carrier accumulation layer is derived. The injection of minority charge carriers in unipolar conditions is unexpectedly evidenced, which is not displayed by the electrical characteristics.
本文展示了一种基于光致发光的电调制来绘制有机场效应晶体管中电荷密度空间分布的新方法。在场效应晶体管中,激子猝灭主要由激子-电荷载流子相互作用决定,因此可以用于绘制不同工作条件下的电荷分布。通过对光致发光猝灭的定量分析,得出了电荷载流子积累层的厚度。在单极条件下注入少数电荷载流子的情况出乎意料,这在电学特性中没有显示。