Shimada Toshikazu, Matsutani Akihiro, Koyama Fumio
Appl Opt. 2014 Mar 20;53(9):1766-74. doi: 10.1364/AO.53.001766.
We present the modeling and the experiment on the lateral integration of a vertical-cavity surface-emitting laser (VCSEL) and slow light Bragg reflector waveguide devices. The modeling shows an efficient direct-lateral coupling from a VCSEL to an integrated slow light waveguide. The calculated result shows a possibility of 13 dB chip gain and an extinction ratio over 5 dB for a compact slow light semiconductor optical amplifier (SOA) and electroabsorption modulator integrated with a VCSEL, respectively. We demonstrate an SOA-integrated VCSEL, exhibiting the maximum output power over 6 mW. Also, we fabricate a sub-50-μm long electroabsorption modulator laterally integrated with a VCSEL. An extinction ratio of over 15 dB for a voltage swing of 2.0 V is obtained without noticeable change of threshold. In addition, we demonstrate an on-chip electrothermal beam deflector integrated with a VCSEL.
我们展示了垂直腔面发射激光器（VCSEL）与慢光布拉格反射器波导器件横向集成的建模与实验。建模显示了从VCSEL到集成慢光波导的高效直接横向耦合。计算结果表明，对于与VCSEL集成的紧凑型慢光半导体光放大器（SOA）和电吸收调制器，分别有实现13 dB芯片增益和超过5 dB消光比的可能性。我们展示了一个集成SOA的VCSEL，其最大输出功率超过6 mW。此外，我们制造了一个与VCSEL横向集成的长度小于50μm的电吸收调制器。在阈值无明显变化的情况下，对于2.0 V的电压摆幅，获得了超过15 dB的消光比。此外，我们还展示了一个与VCSEL集成的片上电热光束偏转器。
