Tsai Ching-Yu, Garaicoa-Pazmino Carlos, Mori Kuniyasu, Benavides Erika, Kaigler Darnell, Kapila Yvonne
Department of Periodontics and Oral Medicine, University of Michigan School of Dentistry, Ann Arbor, MI, USA.
Clin Oral Implants Res. 2015 Apr;26(4):447-453. doi: 10.1111/clr.12386. Epub 2014 Apr 10.
Given that the nature and presence of voids present within grafted sinuses following maxillary sinus elevation procedures were not known, nor was the contribution of these factors to implant success, the purpose of this study was to investigate these parameters and their relationship to implant success.
This study evaluated data from 25 subjects who had a lateral window maxillary sinus augmentation procedure. Cone-beam computed tomography (CBCT) was performed at baseline and 4 months after surgery. CBCT images were used to evaluate grafted sites prior to implant placement. Using CBCT images, three examiners independently measured bone-grafted areas (BG), void areas (V), and percentage of void areas (V%) from six different sections within grafted sites. The six sections were defined as a cross-sectional (CS) midpoint, CS mesial point, CS distal point, horizontal section (HS) low point, HS midpoint, and HS high point. Implant success was also determined.
The calculated V% (V/BG) for the CS midpoint, CS mesial point, CS distal point, HS low point, HS midpoint, and HS high point were 5.30 ± 6.67%, 5.79 ± 8.51%, 6.67 ± 7.12%, 2.07 ± 2.56%, 5.30 ± 6.62%, and 4.92 ± 5.17% respectively. Implant success after 6 months of follow-up approximated 100%.
Although voids within grafts varied in terms of distribution and size, the V% within the HS low point were significantly smaller compared to those within the CS midpoint and CS distal point, which had the most intra-subject V%. Thus, more attention should be given to the distal aspect of the sinus when compacting graft materials in the lateral wall sinus augmentation procedure. Implant success was not influenced by the existence of voids as implant success remained high.
鉴于上颌窦提升术后移植窦内空隙的性质和存在情况尚不清楚，这些因素对种植体成功的贡献也未知，本研究的目的是调查这些参数及其与种植体成功的关系。
本研究评估了25名接受外侧开窗上颌窦提升术患者的数据。在基线和术后4个月进行锥形束计算机断层扫描（CBCT）。CBCT图像用于在种植体植入前评估移植部位。使用CBCT图像，三名检查者独立测量移植部位六个不同截面的骨移植面积（BG）、空隙面积（V）和空隙面积百分比（V%）。这六个截面定义为横截面（CS）中点、CS近中点、CS远中点、水平截面（HS）低点、HS中点和HS高点。同时确定种植体的成功率。
CS中点、CS近中点、CS远中点、HS低点、HS中点和HS高点的计算V%（V/BG）分别为5.30±6.67%、5.79±8.51%、6.67±7.12%、2.07±2.56%、5.30±6.62%和4.92±5.17%。随访6个月后的种植体成功率接近100%。
尽管移植体内的空隙在分布和大小方面存在差异，但HS低点的V%明显小于CS中点和CS远中点，而CS中点和CS远中点在个体内的V%最大。因此，在侧壁窦提升术中压实移植材料时，应更多地关注窦的远端。由于种植体成功率仍然很高，空隙的存在并未影响种植体的成功。
