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利用选择性湿法蚀刻对具有无机配体的胶体量子点层进行微图案化。

The micropatterning of layers of colloidal quantum dots with inorganic ligands using selective wet etching.

作者信息

Hu Chen, Aubert Tangi, Justo Yolanda, Flamee Stijn, Cirillo Marco, Gassenq Alban, Drobchak Oksana, Beunis Filip, Roelkens Günther, Hens Zeger

机构信息

Physics and Chemistry of Nanostructures Group, Ghent University, Krijgslaan 281-S3, B-9000 Gent, Belgium. Photonics Research Group, INTEC Department, Ghent University-IMEC, Sint-Pietersnieuwstraat 41, B-9000 Ghent, Belgium. Center for Nano- and Biophotonics (NB-Photonics), Ghent University, Belgium.

出版信息

Nanotechnology. 2014 May 2;25(17):175302. doi: 10.1088/0957-4484/25/17/175302. Epub 2014 Apr 10.

DOI:10.1088/0957-4484/25/17/175302
PMID:24722007
Abstract

The micropatterning of layers of colloidal quantum dots (QDs) stabilized by inorganic ligands is demonstrated using PbS core and CdSe/CdS core/shell QDs. A layer-by-layer approach is used to assemble the QD films, where each cycle involves the deposition of a QD layer by dip-coating, and the replacement of the native organic ligands by inorganic moieties, such as OH(-) and S(2-), followed by a thorough cleaning of the resulting film. This results in a smooth and crack-free QD film on which a photoresist can be spun. The micropatterns are defined by a positive photoresist, followed by the removal of uncovered QDs by selective wet etching with an HCl/H3PO4 mixture. The resulting patterns can have submicron feature dimensions, limited by the resolution of the lithographic process, and can be formed on planar and 3D substrates. It is shown that the photolithography and wet etching steps have little effect on the photoluminescence quantum yield of CdSe/CdS QDs. Compared with the unpatterned CdSe/CdS QD film, only a 10% degradation in the quantum yield is observed. These results demonstrate the feasibility of the proposed micropatterning method to implement the large-scale device integration of colloidal quantum dots.

摘要

利用硫化铅核量子点和硒化镉/硫化镉核壳量子点,展示了由无机配体稳定的胶体量子点(QD)层的微图案化。采用逐层方法组装量子点薄膜,其中每个循环包括通过浸涂沉积一层量子点,并用无机部分(如OH(-)和S(2-))取代天然有机配体,然后对所得薄膜进行彻底清洗。这会得到一个光滑且无裂纹的量子点薄膜,在其上可以旋涂光刻胶。微图案由正性光刻胶定义,随后用HCl/H3PO4混合物进行选择性湿蚀刻以去除未覆盖的量子点。所得图案的特征尺寸可以达到亚微米级,受光刻工艺分辨率的限制,并且可以在平面和三维基板上形成。结果表明,光刻和湿蚀刻步骤对硒化镉/硫化镉量子点的光致发光量子产率影响很小。与未图案化的硒化镉/硫化镉量子点薄膜相比,仅观察到量子产率有10%的下降。这些结果证明了所提出的微图案化方法用于实现胶体量子点大规模器件集成的可行性。

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