Meng Fanxu, Tao Chen, Wang Yongfan, Shen Liang, Guo Wenbin, Chen Yu, Ruan Shengping
J Nanosci Nanotechnol. 2014 May;14(5):3623-6. doi: 10.1166/jnn.2014.7996.
The CuPc/C60 thin-film bilayer-heterojunction solar cells are fabricated by vacuum deposition with bathocuproine (BCP) as the exciton-blocking layer. Ferroferric oxide (Fe3O4) nanocrystal film is inserted between the copper phthalocaynine (CuPc) layer and indium tin oxide (ITO) anode. The device performances dependent on the thickness of Fe3O4 are investigated and compared. The results show that both the short-circuit current density and fill factor are enhanced by introducing a 1 nm Fe3O4 buffer layer, leading to an increase of power conversion efficiency. The role of Fe3O4 as a buffer layer in the improvement of the device performances is studied in detail by ultraviolet photoemission spectroscopy (UPS).
通过真空沉积法制备了以浴铜灵(BCP)作为激子阻挡层的CuPc/C60薄膜双层异质结太阳能电池。在酞菁铜(CuPc)层和氧化铟锡(ITO)阳极之间插入了四氧化三铁(Fe3O4)纳米晶体薄膜。研究并比较了依赖于Fe3O4厚度的器件性能。结果表明,引入1nm的Fe3O4缓冲层可提高短路电流密度和填充因子,从而提高功率转换效率。通过紫外光电子能谱(UPS)详细研究了Fe3O4作为缓冲层在改善器件性能方面的作用。