Liu Xiaodong, Guo L Jay, Zheng Yonghao
School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People's Republic of China.
Center for Applied Chemistry, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People's Republic of China.
Nanoscale Res Lett. 2017 Sep 21;12(1):543. doi: 10.1186/s11671-017-2299-y.
Lithium fluoride (LiF) is an efficient and widely used cathode buffer layer (CBL) in bulk heterojunction polymer solar cells (PSCs). The LiF thickness is normally limited to 1 nm due to its insulting property. Such small thickness is difficult to precise control during thermal deposition, and more importantly, 1-nm-thick LiF cannot provide sufficient protection for the underlying active layer. Herein, we demonstrated the application of a very thick LiF as CBL without sacrificing the device efficiency by simply inserting a C layer between the active layer and LiF layer. The devices with the C/LiF (5 nm) double CBLs exhibit a peak power conversion efficiency (PCE) of 3.65%, which is twofold higher than that (1.79%) of LiF (5 nm)-only device. The superior performance of the C/LiF (5 nm)-based devices is mainly attributed to the good electrical conductivity of the C/LiF (5 nm) bilayer, arising from the intermixing occurred at the C/LiF interface. Besides, the formation of a P3HT/C subcell and the optical spacer effect of C also contribute to the increase in short-circuit current density (J ) of the device. With further increase of LiF thickness to 8 nm, a PCE of 1.10% is attained for the C/LiF-based device, while the negligible photovoltaic performance is observed for the LiF-only device. All in all, our results show that C/LiF bilayer is a promising alternative to LiF single layer due to its high tolerance to the LiF thickness variations.
氟化锂(LiF)是体异质结聚合物太阳能电池(PSC)中一种高效且广泛使用的阴极缓冲层(CBL)。由于其绝缘特性,LiF的厚度通常限制在1纳米。如此小的厚度在热沉积过程中难以精确控制,更重要的是,1纳米厚的LiF不能为下层的活性层提供足够的保护。在此,我们展示了通过在活性层和LiF层之间简单插入一层C层,应用非常厚的LiF作为CBL而不牺牲器件效率。具有C/LiF(5纳米)双CBL的器件表现出3.65%的峰值功率转换效率(PCE),这比仅使用LiF(5纳米)的器件(1.79%)高出两倍。基于C/LiF(5纳米)的器件的优异性能主要归因于C/LiF(5纳米)双层的良好导电性,这是由C/LiF界面处发生的混合所导致的。此外,P3HT/C子电池的形成以及C的光学间隔效应也有助于器件短路电流密度(J)的增加。随着LiF厚度进一步增加到8纳米,基于C/LiF的器件获得了1.10%的PCE,而仅使用LiF的器件则观察到可忽略不计的光伏性能。总而言之,我们的结果表明,由于C/LiF双层对LiF厚度变化具有高耐受性,它是LiF单层的一种有前途的替代方案。