Li Shuo, Li Xinyue, Deng Kaimo, Wei Xiantao, Chen Yonghu, Chen Yonghu
J Nanosci Nanotechnol. 2014 May;14(5):3631-4. doi: 10.1166/jnn.2014.8008.
White light-emitting diodes have recently attracted great attention as promising candidates for next-generation lighting. The LuVO4:Eu3+,Bi3+ as new near-ultraviolet excited phosphors were synthesized via high-temperature solid-state reactions. The X-ray diffraction, excitation spectra, emission spectra and decay lifetimes of the phosphors were measured to characterize the structure and luminescent properties. With Bi3+ doping, the edge of excitation band corresponding to the Eu3+ emission shifts from 350 nm to 400 nm with the help of Bi(3+)-V5+ metal-metal charge transfer. Consequently, the phosphor exhibits efficient absorption of near-ultraviolet excitation, and it also exhibits excellent performance in emission intensity compared with the Y2O2S:Eu3+ phosphor in current use. This red-emitting material may be applied as a promising red phosphor for near-ultraviolet excited white light-emitting diodes.
白光发光二极管作为下一代照明的有前途的候选者，最近受到了极大的关注。通过高温固相反应合成了新型近紫外激发荧光粉LuVO4:Eu3+,Bi3+。测量了荧光粉的X射线衍射、激发光谱、发射光谱和衰减寿命，以表征其结构和发光性能。通过Bi3+掺杂，在Bi(3+)-V5+金属-金属电荷转移的帮助下，对应于Eu3+发射的激发带边缘从350nm移至400nm。因此，该荧光粉表现出对近紫外激发的有效吸收，并且与目前使用的Y2O2S:Eu3+荧光粉相比，在发射强度方面也表现出优异的性能。这种发红光的材料可作为近紫外激发白光发光二极管的一种有前途的红色荧光粉应用。
