Zhang Min, Liu Guohua, Gu Xuehui, Zhou Jingran, Guo Wenbin, Shen Liang, Ruan Shengping
J Nanosci Nanotechnol. 2014 May;14(5):3827-30. doi: 10.1166/jnn.2014.7997.
In this letter, metal-semiconductor-metal (MSM) solar-blind photodetector was fabricated on LaAlO3 (110) substrates with Pt and Au electrodes. The substrate material was characterized by XRD and UV-visible absorption spectrum. At 10 V bias, the photodetector with Pt electrodes shows a very low dark current of 4.1 pA, which is much smaller than that of detector with Au electrodes (14.6 pA). The low dark current may be attributed to the high density steps and facets on the (110) surface as well as the large lattice mismatch at the Pt/LaAlO3 interface. The device exhibits a peak responsivity of 32.5 mA/W at 200 nm ultraviolet light, which lies in the solar-blind spectral region (200-280 nm). The reasons of low dark current and high responsivity, which were important to photodetectors, were discussed in detail.
在这封信中,在具有Pt和Au电极的LaAlO3(110)衬底上制备了金属-半导体-金属(MSM)日盲光电探测器。通过X射线衍射(XRD)和紫外-可见吸收光谱对衬底材料进行了表征。在10V偏压下,具有Pt电极的光电探测器显示出非常低的暗电流,为4.1pA,这比具有Au电极的探测器(14.6pA)的暗电流小得多。低暗电流可能归因于(110)表面上的高密度台阶和小面以及Pt/LaAlO3界面处的大晶格失配。该器件在200nm紫外光下表现出32.5mA/W的峰值响应率,该紫外光位于日盲光谱区域(200-280nm)。详细讨论了对光电探测器很重要的低暗电流和高响应率的原因。