Behura Sanjay K, Mahala Pramila, Nayak Sasmita, Yang Qiaoqin, Mukhopadhyay Indrajit, Janil Omkar
J Nanosci Nanotechnol. 2014 Apr;14(4):3022-7. doi: 10.1166/jnn.2014.8572.
High quality graphene film is fabricated using mechanical exfoliation of highly-oriented pyrolytic graphite. The graphene films on glass substrates are characterized using field-emission scanning electron microscopy, atomic force microscopy, Raman spectroscopy, UV-vis spectroscopy and Fourier transform infrared spectroscopy. A very high intensity ratio of 2D to G-band (to approximately 1.67) and narrow 2D-band full-width at half maximum (to approximately 40 cm(-1)) correspond to the bi-layer graphene formation. The bi-layer graphene/p-GaN/n-InGaN/n-GaN/GaN/sAl2O3 system is studied theoretically using TCAD Silvaco software, in which the properties of exfoliated bi-layer graphene are used as transparent and conductive film, and the device exhibits an efficiency of 15.24% compared to 13.63% for ITO/p-GaN/n-InGaN/n-GaN/GaN/Al2O3 system.
通过对高度取向的热解石墨进行机械剥离来制备高质量的石墨烯薄膜。使用场发射扫描电子显微镜、原子力显微镜、拉曼光谱、紫外可见光谱和傅里叶变换红外光谱对玻璃基板上的石墨烯薄膜进行表征。二维带与G带的强度比非常高（约为1.67），且二维带的半高宽很窄（约为40 cm⁻¹），这对应于双层石墨烯的形成。使用TCAD Silvaco软件对双层石墨烯/p-GaN/n-InGaN/n-GaN/GaN/sAl₂O₃系统进行了理论研究，其中将剥离的双层石墨烯的特性用作透明导电薄膜，与ITO/p-GaN/n-InGaN/n-GaN/GaN/Al₂O₃系统的13.63%相比，该器件的效率为15.24%。
