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基于跳跃机制的有机器件中巨磁电导的研究。

Investigation of giant magnetoconductance in organic devices based on hopping mechanism.

作者信息

Yang F J, Qin W, Xie S J

机构信息

School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.

出版信息

J Chem Phys. 2014 Apr 14;140(14):144110. doi: 10.1063/1.4869936.

DOI:10.1063/1.4869936
PMID:24735291
Abstract

We suggest a spin-dependent hopping mechanism which includes the effect of the external magnetic field as well as hyperfine interaction (HFI) to explain the observed giant magnetoconductance (MC) in non-magnetic organic devices. Based on the extended Marcus theory, we calculate the MC by using the master equation. It is found that a MC value as large as 91% is obtained under a low driving voltage. For suitable parameters, the theoretical results are in good agreement with the experimental data. Influences of the carrier density, HFI, and the carrier localization on the MC value are investigated. Especially, it is found that a low-dimensional structure of the organic materials is favorable to get a large MC value.

摘要

我们提出一种自旋相关的跳跃机制,该机制包括外部磁场以及超精细相互作用(HFI)的影响,以解释在非磁性有机器件中观测到的巨磁电导(MC)。基于扩展的马库斯理论,我们使用主方程来计算MC。结果发现,在低驱动电压下可获得高达91%的MC值。对于合适的参数,理论结果与实验数据吻合良好。研究了载流子密度、HFI以及载流子局域化对MC值的影响。特别地,发现有机材料的低维结构有利于获得较大的MC值。

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