Qi J L, Nagashio K, Nishimura T, Toriumi A
State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, People's Republic of China. Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan.
Nanotechnology. 2014 May 9;25(18):185602. doi: 10.1088/0957-4484/25/18/185602. Epub 2014 Apr 16.
Clean, flat and orientation-identified graphene on a substrate is in high demand for graphene electronics. In this study, the hetero-epitaxial graphene growth on Cu(111)/mica(001) by chemical vapor deposition is investigated to check the applicability for top-gate insulator research on graphene, as well as graphene channel research, by transferring graphene on to SiO2/Si substrates. After adjusting the graphene growth conditions, the surface roughness of the graphene/Cu/mica substrate and the average smoothed areas are ∼0.34 nm and ∼100 μm(2), respectively. The orientation of graphene in the graphene/Cu/mica substrate can be identified by the hexagonal void morphology of Cu. Moreover, we demonstrate a relatively high mobility of ∼4500 cm(2) V(-1) s(-1) in graphene transferred on the SiO2/Si substrate. These results suggest that the present graphene/Cu/mica substrate can be used for top-gate insulator research on graphene.
对于石墨烯电子学而言，在衬底上获得清洁、平整且取向明确的石墨烯的需求十分迫切。在本研究中，通过化学气相沉积法在Cu(111)/云母(001)上进行异质外延石墨烯生长的研究，旨在通过将石墨烯转移到SiO2/Si衬底上，来检验其在石墨烯顶栅绝缘体研究以及石墨烯沟道研究中的适用性。调整石墨烯生长条件后，石墨烯/Cu/云母衬底的表面粗糙度和平均平滑面积分别约为0.34 nm和约100 μm²。石墨烯/Cu/云母衬底中石墨烯的取向可通过Cu的六边形空洞形态来识别。此外，我们还展示了转移到SiO2/Si衬底上的石墨烯中具有约4500 cm² V⁻¹ s⁻¹的相对较高迁移率。这些结果表明，当前的石墨烯/Cu/云母衬底可用于石墨烯顶栅绝缘体研究。
