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内嵌掺杂中性硅团簇Si(n)Co(n = 10 - 12)的结构归属、电子性质及磁性猝灭

Structure assignment, electronic properties, and magnetism quenching of endohedrally doped neutral silicon clusters, Si(n)Co (n = 10-12).

作者信息

Li Yejun, Tam Nguyen Minh, Claes Pieterjan, Woodham Alex P, Lyon Jonathan T, Ngan Vu Thi, Nguyen Minh Tho, Lievens Peter, Fielicke André, Janssens Ewald

机构信息

Laboratory of Solid State Physics and Magnetism and ‡Department of Chemistry, KU Leuven , 3001 Leuven, Belgium.

出版信息

J Phys Chem A. 2014 Sep 18;118(37):8198-203. doi: 10.1021/jp500928t. Epub 2014 May 9.

DOI:10.1021/jp500928t
PMID:24758409
Abstract

The structures of neutral cobalt-doped silicon clusters have been assigned by a combined experimental and theoretical study. Size-selective infrared spectra of neutral Si(n)Co (n = 10-12) clusters are measured using a tunable IR-UV two-color ionization scheme. The experimental infrared spectra are compared with calculated spectra of low-energy structures predicted at the B3P86 level of theory. It is shown that the Si(n)Co (n = 10-12) clusters have endohedral caged structures, where the silicon frameworks prefer double-layered structures encapsulating the Co atom. Electronic structure analysis indicates that the clusters are stabilized by an ionic interaction between the Co dopant atom and the silicon cage due to the charge transfer from the silicon valence sp orbitals to the cobalt 3d orbitals. Strong hybridization between the Co dopant atom and the silicon host quenches the local magnetic moment on the encapsulated Co atom.

摘要

通过实验和理论相结合的研究确定了中性钴掺杂硅团簇的结构。使用可调谐红外 - 紫外双色电离方案测量了中性Si(n)Co(n = 10 - 12)团簇的尺寸选择性红外光谱。将实验红外光谱与在B3P86理论水平预测的低能量结构的计算光谱进行比较。结果表明,Si(n)Co(n = 10 - 12)团簇具有内包笼状结构,其中硅骨架更喜欢双层结构来包裹Co原子。电子结构分析表明,由于电荷从硅价sp轨道转移到钴3d轨道,团簇通过Co掺杂原子与硅笼之间的离子相互作用而稳定。Co掺杂原子与硅主体之间的强杂化消除了被包裹Co原子上的局部磁矩。

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