原子层沉积氧化镓缓冲层使氧化亚铜太阳能电池的开路电压达到 1.2V。
Atomic layer deposited gallium oxide buffer layer enables 1.2 V open-circuit voltage in cuprous oxide solar cells.
机构信息
Massachusetts Institute of Technology, Cambridge, Massachusetts, 02139, USA.
出版信息
Adv Mater. 2014 Jul 16;26(27):4704-10. doi: 10.1002/adma.201401054. Epub 2014 May 23.
PMID:24862543
Abstract
The power conversion efficiency of solar cells based on copper (I) oxide (Cu2 O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2 O3 ) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.
摘要
通过原子层沉积一层薄的氧化镓（Ga2 O3 ）层，提高了基于氧化亚铜（Cu2 O）的太阳能电池的功率转换效率。通过改善能带排列和钝化界面缺陷，该器件的开路电压为 1.20V，效率为 3.97%，显示出超过 7%效率的潜力。
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