Caliskan S, Laref A
Department of Physics, Fatih University, 34500, Buyukcekmece, Istanbul, Turkey.
Phys Chem Chem Phys. 2014 Jul 14;16(26):13191-208. doi: 10.1039/c3cp54319f.
Spin-polarized transport properties are determined for pentacene sandwiched between Ni surface electrodes with various anchoring ligands. These calculations are carried out using spin density functional theory in tandem with a non-equilibrium Green's function technique. The presence of a Se atom at the edge of the pentacene molecule significantly modifies the transport properties of the device because Se has a different electronegativity than S. Our theoretical results clearly show a larger current for spin-up electrons than for spin-down electrons in the molecular junction that is attached asymmetrically across the Se linker at one side of the Ni electrodes (in an APL magnetic orientation). Moreover, this molecular junction exhibits pronounced NDR as the bias voltage is increased from 0.8 to 1.0 V. However, this novel NDR behavior is only detected in this promising pentacene molecular device. The NDR in the current-voltage (I-V) curve results from the narrowness of the density of states for the molecular states. The feasibility of controlling the TMR is also predicted in these molecular device nanostructures. Spin-dependent transmission calculations show that the sign and strength of the current-bias voltage characteristics and the TMR could be tailored for the organic molecule devices. These molecular junctions are joined symmetrically and asymmetrically between Ni metallic probes across the S and Se atoms (at the ends of the edges of the pentacene molecule). Our theoretical findings show that spin-valve phenomena can occur in these prototypical molecular junctions. The TMR and NDR results show that nanoscale junctions with spin valves could play a vital role in the production of novel functional molecular devices.
研究了夹在具有各种锚定配体的镍表面电极之间的并五苯的自旋极化输运性质。这些计算是使用自旋密度泛函理论结合非平衡格林函数技术进行的。并五苯分子边缘存在硒原子会显著改变器件的输运性质,因为硒的电负性与硫不同。我们的理论结果清楚地表明,在镍电极一侧通过硒连接体不对称连接的分子结中,自旋向上电子的电流比自旋向下电子的电流大(处于反平行磁取向)。此外,当偏置电压从0.8 V增加到1.0 V时,这种分子结表现出明显的负微分电阻(NDR)。然而,这种新颖的NDR行为仅在这种有前景的并五苯分子器件中被检测到。电流-电压(I-V)曲线中的NDR是由分子态的态密度狭窄引起的。在这些分子器件纳米结构中还预测了控制隧穿磁电阻(TMR)的可行性。自旋相关的传输计算表明,电流-偏置电压特性和TMR的符号和强度可以针对有机分子器件进行调整。这些分子结在镍金属探针之间通过硫和硒原子(在并五苯分子边缘的末端)对称和不对称地连接。我们的理论研究结果表明,自旋阀现象可以在这些典型的分子结中发生。TMR和NDR结果表明,具有自旋阀的纳米级结在新型功能分子器件的生产中可能起着至关重要的作用。