Kang Woonggi, Kim Nam Hee, Lee Dong Yun, Chang Suk Tai, Cho Jeong Ho
SKKU Advanced Institute of Nanotechnology (SAINT) and School of Chemical Engineering, Sungkyunkwan University , Suwon 440-746, Korea.
ACS Appl Mater Interfaces. 2014 Jun 25;6(12):9664-70. doi: 10.1021/am5020315. Epub 2014 Jun 11.
We demonstrated the solution-processed single-walled carbon nanotube (SWNT) source-drain electrodes patterned using a plasma-enhanced detachment patterning method for high-performance organic transistors and inverters. The high-resolution SWNT electrode patterning began with the formation of highly uniform SWNT thin films on a hydrophobic silanized substrate. The SWNT source-drain patterns were then formed by modulating the interfacial energies of the prepatterned elastomeric mold and the SWNT thin film using oxygen plasma. The SWNT films were subsequently selectively delaminated using a rubber mold. The patterned SWNTs could be used as the source-drain electrodes for both n-type PTCDI-C8 and p-type pentacene field-effect transistors (FETs). The n- and p-type devices exhibited good and exactly matched electrical performances, with a field-effect mobility of around 0.15 cm(2) V(-1) s(-1) and an ON/OFF current ratio exceeding 10(6). The single electrode material was used for both the n and p channels, permitting the successful fabrication of a high-performance complementary inverter by connecting a p-type pentacene FET to an n-type PTCDI-C8 FET. This patterning technique was simple, inexpensive, and easily scaled for the preparation of large-area electrode micropatterns for flexible microelectronic device fabrication.
我们展示了一种采用等离子体增强剥离图案化方法制备的溶液处理单壁碳纳米管（SWNT）源漏电极，用于高性能有机晶体管和逆变器。高分辨率的SWNT电极图案化始于在疏水硅烷化衬底上形成高度均匀的SWNT薄膜。然后通过使用氧等离子体调节预图案化弹性体模具和SWNT薄膜的界面能来形成SWNT源漏图案。随后使用橡胶模具选择性地剥离SWNT薄膜。图案化的SWNTs可用作n型PTCDI-C8和p型并五苯场效应晶体管（FET）的源漏电极。n型和p型器件表现出良好且精确匹配的电学性能，场效应迁移率约为0.15 cm² V⁻¹ s⁻¹，开/关电流比超过10⁶。单一电极材料用于n沟道和p沟道，通过将p型并五苯FET与n型PTCDI-C8 FET连接，成功制备了高性能互补逆变器。这种图案化技术简单、廉价，并且易于扩展以制备用于柔性微电子器件制造的大面积电极微图案。
