Leem Jung Woo, Lee Hee Kwan, Jun Dong-Hwan, Heo Jonggon, Park Won-Kyu, Park Jin-Hong, Yu Jae Su
Opt Express. 2014 Mar 10;22 Suppl 2:A328-34. doi: 10.1364/OE.22.00A328.
We report the efficiency enhancement of III-V InGaP/GaAs/ Ge triple-junction (TJ) solar cells using a novel structure, i.e., vertically-oriented gallium oxide hydroxide (GaOOH) nanopillars (NPs), as an antireflection coating. The optical reflectance properties of rhombus-shaped GaOOH NPs, which were synthesized by a simple, low-cost, and large-scalable electrochemical deposition method, were investigated, together with a theoretical analysis using the rigorous coupled-wave analysis method. For the GaOOH NPs, the solar weighted reflectance of 8.5% was obtained over a wide wavelength range of 300-1800 nm and their surfaces exhibited a high water contact angle of ~130° (i.e., hydrophobicity). To simply demonstrate the feasibility of device applications, the GaOOH NPs were incorporated into a test-grown InGaP/GaAs/Ge TJ solar cell structure. For the InGaP/GaAs/Ge TJ solar cell with broadband antireflective GaOOH NPs, the conversion efficiency (η) of ~16.47% was obtained, indicating an increased efficiency by 3.47% compared to the bare solar cell (i.e., η13%).
我们报道了采用一种新型结构，即垂直取向的氢氧化镓氧化物（GaOOH）纳米柱（NP）作为减反射涂层，来提高III-V族InGaP/GaAs/Ge三结（TJ）太阳能电池的效率。研究了通过简单、低成本且可大规模扩展的电化学沉积方法合成的菱形GaOOH纳米柱的光学反射特性，并使用严格耦合波分析方法进行了理论分析。对于GaOOH纳米柱，在300 - 1800 nm的宽波长范围内获得了约8.5%的太阳加权反射率，其表面表现出约130°的高水接触角（即疏水性）。为了简单证明器件应用的可行性，将GaOOH纳米柱纳入测试生长的InGaP/GaAs/Ge TJ太阳能电池结构中。对于具有宽带抗反射GaOOH纳米柱的InGaP/GaAs/Ge TJ太阳能电池，获得了约16.47%的转换效率（η），表明与裸太阳能电池相比效率提高了3.47%（即η~13%）。
