Ludemann Michael, Gordan Ovidiu D, Zahn Dietrich R T, Beekman Matt, Atkins Ryan, Johnson David C
Semiconductor Physics, Technische Universität Chemnitz , D-09107 Chemnitz, Germany.
Langmuir. 2014 Jul 15;30(27):8209-14. doi: 10.1021/la501722d. Epub 2014 Jul 2.
Raman spectroscopy is used to probe the structural changes in [SnSe]m[MoSe2]n ferecrystal thin films as a function of m, the number of bilayers of SnSe. In spite of the interleaved structure in the intergrowths, Raman spectra can be described as a superposition of spectra from the individual components, indicating that the interaction at the interface between the components is relatively weak. Analysis of room-temperature Raman spectra indicate that the MoSe2 layers separating the SnSe layers are nanocrystalline in all of the samples studied, with little change as the number of Se-Mo-Se trilayers (n) or SnSe bilayers (m) increases, reflecting the rotational disorder between adjacent trilayers. A thickness-dependent, continuous transition occurs in the SnSe layer as m is increased, from a pseudotetragonal structure when the layers are thin to a bulk-like orthorhombic SnSe structure when the SnSe layer thickness is increased. Polarization analysis of the Raman scattering from these materials allows the symmetry evolution of the SnSe layers through this transition to be determined.
拉曼光谱用于探测[SnSe]m[MoSe2]n混晶薄膜中的结构变化,该变化是作为SnSe双层数m的函数。尽管共生结构中存在交错结构,但拉曼光谱可描述为各组分光谱的叠加,这表明各组分之间界面处的相互作用相对较弱。室温拉曼光谱分析表明,在所研究的所有样品中,分隔SnSe层的MoSe2层均为纳米晶,随着Se-Mo-Se三层数(n)或SnSe双层数(m)的增加变化不大,这反映了相邻三层之间的旋转无序。随着m的增加,SnSe层中会发生厚度依赖性的连续转变,从层较薄时的假四方结构转变为SnSe层厚度增加时的块状正交晶系SnSe结构。对这些材料的拉曼散射进行偏振分析,可以确定SnSe层在该转变过程中的对称性演变。