Wang K, Gu Y, Zhou H F, Zhang L Y, Kang C Z, Wu M J, Pan W W, Lu P F, Gong Q, Wang S M
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai 200050, China.
Qufu Normal University, 57 West Jinxuan Road, Qufu 273165, China.
Sci Rep. 2014 Jun 26;4:5449. doi: 10.1038/srep05449.
InPBi was predicted to be the most robust infrared optoelectronic material but also the most difficult to synthesize within In-VBi (V = P, As and Sb) 25 years ago. We report the first successful growth of InPBi single crystals with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InPBi thin films reveal excellent surface, structural and optical qualities making it a promising new III-V compound family member for heterostructures. The Bi concentration is found to be 2.4 ± 0.4% with 94 ± 5% Bi atoms at substitutional sites. Optical absorption indicates a band gap of 1.23 eV at room temperature while photoluminescence shows unexpectedly strong and broad light emission at 1.4-2.7 μm which can't be explained by the existing theory.
25年前，磷化铟铋被预测为最稳定的红外光电子材料，但也是铟-Ⅴ铋（Ⅴ = 磷、砷和锑）体系中最难合成的材料。我们报道了通过气体源分子束外延首次成功生长出铋浓度远超过掺杂水平的磷化铟铋单晶。磷化铟铋薄膜展现出优异的表面、结构和光学品质，使其成为用于异质结构的有前景的新型Ⅲ-Ⅴ族化合物家族成员。发现铋浓度为2.4±0.4%，其中94±5%的铋原子位于替代位点。光吸收表明室温下带隙为1.23电子伏特，而光致发光显示在1.4 - 2.7微米处有出乎意料的强烈且宽泛的光发射，这无法用现有理论解释。
