ACS Nano. 2014 Jul 22;8(7):7192-201. doi: 10.1021/nn502199z.
Organic semiconductors hold immense promise for the development of a wide range of innovative devices with their excellent electronic and manufacturing characteristics. Of particular interest are nonmagnetic organic semiconductors that show unusual magnetic field effects (MFEs) at small subtesla field strength that can result in substantial changes in their optoelectronic and electronic properties. These unique phenomena provide a tremendous opportunity to significantly impact the functionality of organic-based devices and may enable disruptive electronic and spintronic technologies. Here, we present an approach to vary the MFEs on the electrical resistance of organic-based systems in a simple yet reliable fashion. We experimentally modify the interfacial characteristics by adding a self-assembled monolayer between the metal electrode and the organic semiconductor, thus enabling the tuning of competing MFE mechanisms coexisting in organic semiconductors. This approach offers a robust method for tuning the magnitude and sign of magnetoresistance in organic semiconductors without compromising the ease of processing.
有机半导体具有出色的电子和制造特性，为开发各种创新设备提供了巨大的潜力。特别引人关注的是无磁有机半导体，它们在小至亚特斯拉场强下表现出异常的磁场效应 (MFEs)，这可能导致其光电和电子特性发生实质性变化。这些独特的现象为显著影响有机基设备的功能提供了巨大的机会，并可能实现颠覆性的电子和自旋电子技术。在这里，我们提出了一种简单而可靠的方法来改变有机基系统的电电阻中的磁场效应。我们通过在金属电极和有机半导体之间添加自组装单层来实验性地改变界面特性，从而能够调整有机半导体中共存的竞争磁场效应机制。这种方法为在不影响处理便利性的情况下调整有机半导体的磁阻幅度和符号提供了一种稳健的方法。
