Institute of Solid State Physics, Friedrich-Schiller-University Jena , Max-Wien-Platz 1, 07743 Jena, Germany.
Nano Lett. 2014 Aug 13;14(8):4523-8. doi: 10.1021/nl5015553. Epub 2014 Jul 2.
Successful doping and excellent optical activation of Eu(3+) ions in ZnO nanowires were achieved by ion implantation. We identified and assigned the origin of the intra-4f luminescence of Eu(3+) ions in ZnO by first-principles calculations to Eu-Oi complexes, which are formed during the nonequilibrium ion implantation process and subsequent annealing at 700 °C in air. Our targeted defect engineering resulted in intense intrashell luminescence of single ZnO:Eu nanowires dominating the photoluminescence spectrum even at room temperature. The high intensity enabled us to study the luminescence of single ZnO nanowires in detail, their behavior as a function of excitation power, waveguiding properties, and the decay time of the transition.
通过离子注入成功实现了 ZnO 纳米线中 Eu(3+)离子的掺杂和优异的光学激活。我们通过第一性原理计算确定并分配了 ZnO 中 Eu(3+)离子的 intra-4f 发光的起源是 Eu-Oi 复合物，它们是在非平衡离子注入过程中形成的，并在随后的 700°C 空气中退火过程中形成的。我们的目标缺陷工程导致单根 ZnO:Eu 纳米线的内壳层发光强度很高，即使在室温下，其发光也主导了光致发光光谱。高强度使我们能够详细研究单根 ZnO 纳米线的发光，研究其作为激发功率、波导特性和跃迁衰减时间的函数的行为。
