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硅中交换耦合 31P 电子自旋的单拍读出和单重态与三重态弛豫。

Single-shot readout and relaxation of singlet and triplet states in exchange-coupled 31P electron spins in silicon.

机构信息

Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, UNSW Australia, Sydney, New South Wales 2052, Australia.

Instituto de Fisica, Universidade Federal do Rio de Janeiro, Caixa Postal 68528, 21941-972 Rio de Janeiro, Brazil and University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.

出版信息

Phys Rev Lett. 2014 Jun 13;112(23):236801. doi: 10.1103/PhysRevLett.112.236801. Epub 2014 Jun 9.

Abstract

We present the experimental observation of a large exchange coupling J ≈ 300 μeV between two (31)P electron spin qubits in silicon. The singlet and triplet states of the coupled spins are monitored in real time by a single-electron transistor, which detects ionization from tunnel-rate-dependent processes in the coupled spin system, yielding single-shot readout fidelities above 95%. The triplet to singlet relaxation time T(1) ≈ 4 ms at zero magnetic field agrees with the theoretical prediction for J-coupled 31P dimers in silicon. The time evolution of the two-electron state populations gives further insight into the valley-orbit eigenstates of the donor dimer, valley selection rules and relaxation rates, and the role of hyperfine interactions. These results pave the way to the realization of two-qubit quantum logic gates with spins in silicon and highlight the necessity to adopt gating schemes compatible with weak J-coupling strengths.

摘要

我们展示了在硅中两个(31)P 电子自旋量子位之间的大交换耦合 J ≈ 300 μeV 的实验观察结果。通过单电子晶体管实时监测耦合自旋系统的 singlet 和 triplet 态,该晶体管检测到来自耦合自旋系统中隧穿速率相关过程的电离,从而产生超过 95%的单-shot 读出保真度。在零磁场下,T(1) ≈ 4 ms 的 triplet 到 singlet 弛豫时间与硅中 J 耦合 31P 二聚体的理论预测一致。双电子态的时间演化进一步深入了解了施主二聚体的谷轨道本征态、谷选择定则和弛豫率,以及超精细相互作用的作用。这些结果为在硅中实现具有自旋的两量子比特量子逻辑门铺平了道路,并强调了采用与弱 J 耦合强度兼容的门控方案的必要性。

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