Zhao Ye, Hao Xihong, Zhang Qi
School of Materials and Metallurgy, Inner Mongolia University of Science and Technology , Baotou 014010, China.
ACS Appl Mater Interfaces. 2014 Jul 23;6(14):11633-9. doi: 10.1021/am502415z. Epub 2014 Jul 10.
Antiferroelectric (AFE) thick (1 μm) films of Pb(1-3x/2)LaxZr0.85Ti0.15O3 (PLZT) with x = 0.08, 0.10, 0.12, and 0.14 were deposited on LaNiO3/Si (100) substrates by a sol-gel method. The dielectric properties, energy-storage performance, electrocaloric effect, and leakage current behavior were investigated in detail. With increasing La content, dielectric constant and saturated polarizations of the thick films were gradually decreased. A maximum recoverable energy-storage density of 38 J/cm(3) and efficiency of 71% were achieved in the thick films with x = 0.12 at room temperature. A large reversible adiabatic temperature change of ΔT = 25.0 °C was presented in the thick films with x = 0.08 at 127 °C at 990 kV/cm. Moreover, all the samples had a lower leakage current density below 10(-6) A/cm(2) at room temperature. These results indicated that the PLZT AFE thick films could be a potential candidate for applications in high energy-storage density capacitors and cooling devices.
采用溶胶 - 凝胶法在LaNiO₃/Si(100)衬底上沉积了x = 0.08、0.10、0.12和0.14的Pb(1 - 3x/2)LaxZr0.85Ti0.15O₃(PLZT)反铁电(AFE)厚膜(1μm)。详细研究了其介电性能、储能性能、电热效应和漏电流行为。随着La含量的增加,厚膜的介电常数和饱和极化强度逐渐降低。在室温下,x = 0.12的厚膜实现了38 J/cm³的最大可恢复储能密度和71%的效率。在990 kV/cm、127℃条件下,x = 0.08的厚膜呈现出ΔT = 25.0℃的大可逆绝热温度变化。此外,所有样品在室温下的漏电流密度均低于10⁻⁶ A/cm²。这些结果表明,PLZT AFE厚膜可能是高储能密度电容器和冷却装置应用的潜在候选材料。