Suppr超能文献

基于曲率校正的时域CMOS智能温度传感器,在-40°C至120°C进行单点校准后,误差为-0.8°C至1.2°C。

Curvature-correction-based time-domain CMOS smart temperature sensor with an inaccuracy of -0.8 °C-1.2 °C after one-point calibration from -40 °C to 120 °C.

作者信息

Chen Chun-Chi, Lin Shih-Hao, Lin Yi

机构信息

Department of Electronic Engineering, National Kaohsiung First University of Science and Technology, No. 2, Jhuoyue Rd., Nanzih District, Kaohsiung City 811, Taiwan.

出版信息

Rev Sci Instrum. 2014 Jun;85(6):065005. doi: 10.1063/1.4884793.

Abstract

This paper proposes a time-domain CMOS smart temperature sensor featuring on-chip curvature correction and one-point calibration support for thermal management systems. Time-domain inverter-based temperature sensors, which exhibit the advantages of low power and low cost, have been proposed for on-chip thermal monitoring. However, the curvature is large for the thermal transfer curve, which substantially affects the accuracy as the temperature range increases. Another problem is that the inverter is sensitive to process variations, resulting in difficulty for the sensors to achieve an acceptable accuracy for one-point calibration. To overcome these two problems, a temperature-dependent oscillator with curvature correction is proposed to increase the linearity of the oscillatory width, thereby resolving the drawback caused by a costly off-chip second-order master curve fitting. For one-point calibration support, an adjustable-gain time amplifier was adopted to eliminate the effect of process variations, with the assistance of a calibration circuit. The proposed circuit occupied a small area of 0.073 mm(2) and was fabricated in a TSMC CMOS 0.35-μm 2P4M digital process. The linearization of the oscillator and the effect cancellation of process variations enabled the sensor, which featured a fixed resolution of 0.049 °C/LSB, to achieve an optimal inaccuracy of -0.8 °C to 1.2 °C after one-point calibration of 12 test chips from -40 °C to 120 °C. The power consumption was 35 μW at a sample rate of 10 samples/s.

摘要

本文提出了一种用于热管理系统的具有片上曲率校正和单点校准功能的时域CMOS智能温度传感器。基于时域反相器的温度传感器具有低功耗和低成本的优点,已被用于片上热监测。然而,热传递曲线的曲率较大,随着温度范围的增加,这会严重影响精度。另一个问题是反相器对工艺变化敏感,导致传感器难以通过单点校准达到可接受的精度。为了克服这两个问题,提出了一种具有曲率校正的温度相关振荡器,以提高振荡宽度的线性度,从而解决由昂贵的片外二阶主曲线拟合引起的缺点。对于单点校准支持,采用了可调增益时间放大器,在校准电路的辅助下消除工艺变化的影响。所提出的电路占用面积小,为0.073 mm²,采用台积电CMOS 0.35-μm 2P4M数字工艺制造。振荡器的线性化和工艺变化的影响消除使该传感器在固定分辨率为0.049°C/LSB的情况下,在对12个测试芯片从-40°C到120°C进行单点校准后,实现了-0.8°C至1.2°C的最佳不准确度。在采样率为10个样本/秒时,功耗为35 μW。

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验