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六叔丁基乙硅烷的低温变体及1,1,2,2-四叔丁基-1,2-二苯基乙硅烷的一种新多晶型物。

A low-temperature modification of hexa-tert-butyldisilane and a new polymorph of 1,1,2,2-tetra-tert-butyl-1,2-diphenyldisilane.

作者信息

Scholz Stefan, Lerner Hans-Wolfram, Bats Jan W

机构信息

Institut für Anorganische und Analytische Chemie, Universität Frankfurt, Max-von-Laue-Strasse 7, D-60438 Frankfurt am Main, Germany.

Institut für Organische Chemie und Chemische Biologie, Universität Frankfurt, Max-von-Laue-Strasse 7, D-60438 Frankfurt am Main, Germany.

出版信息

Acta Crystallogr C Struct Chem. 2014 Jul;70(Pt 7):697-701. doi: 10.1107/S2053229614013503. Epub 2014 Jun 17.

DOI:10.1107/S2053229614013503
PMID:24992114
Abstract

Crystals of hexa-tert-butyldisilane, C24H54Si2, undergo a reversible phase transition at 179 (2) K. The space group changes from Ibca (high temperature) to Pbca (low temperature), but the lattice constants a, b and c do not change significantly during the phase transition. The crystallographic twofold axis of the molecule in the high-temperature phase is replaced by a noncrystallographic twofold axis in the low-temperature phase. The angle between the two axes is 2.36 (4)°. The centre of the molecule undergoes a translation of 0.123 (1) Å during the phase transition, but the conformation angles of the molecule remain unchanged. Between the two tri-tert-butylsilyl subunits there are six short repulsive intramolecular C-H···H-C contacts, with H···H distances between 2.02 and 2.04 Å, resulting in a significant lengthening of the Si-Si and Si-C bonds. The Si-Si bond length is 2.6863 (5) Å and the Si-C bond lengths are between 1.9860 (14) and 1.9933 (14) Å. Torsion angles about the Si-Si and Si-C bonds deviate by approximately 15° from the values expected for staggered conformations due to intramolecular steric H···H repulsions. A new polymorph is reported for the crystal structure of 1,1,2,2-tetra-tert-butyl-1,2-diphenyldisilane, C28H46Si2. It has two independent molecules with rather similar conformations. The Si-Si bond lengths are 2.4869 (8) and 2.4944 (8) Å. The C-Si-Si-C torsion angles deviate by between -3.4 (1) and -18.5 (1)° from the values expected for a staggered conformation. These deviations result from steric interactions. Four Si-C(t-Bu) bonds are almost staggered, while the other four Si-C(t-Bu) bonds are intermediate between a staggered and an eclipsed conformation. The latter Si-C(t-Bu) bonds are about 0.019 (2) Å longer than the staggered Si-C(t-Bu) bonds.

摘要

六叔丁基二硅烷(C₂₄H₅₄Si₂)晶体在179 (2) K发生可逆相变。空间群从高温相的Ibca转变为低温相的Pbca,但晶格常数a、b和c在相变过程中变化不显著。高温相分子的晶体学二重轴在低温相被一个非晶体学二重轴取代。两轴之间的夹角为2.36 (4)°。分子中心在相变过程中平移了0.123 (1) Å,但分子的构象角保持不变。在两个三叔丁基硅基亚基之间有六个短程排斥性分子内C-H···H-C接触,H···H距离在2.02至2.04 Å之间,导致Si-Si键和Si-C键显著变长。Si-Si键长为2.6863 (5) Å,Si-C键长在1.9860 (14)至1.9933 (14) Å之间。由于分子内空间位阻H···H排斥作用,围绕Si-Si键和Si-C键的扭转角与交错构象预期值偏差约15°。报道了1,1,2,2-四叔丁基-1,2-二苯基二硅烷(C₂₈H₄₆Si₂)晶体结构的一种新多晶型。它有两个构象相当相似的独立分子。Si-Si键长分别为2.4869 (8) Å和2.4944 (8) Å。C-Si-Si-C扭转角与交错构象预期值的偏差在-3.4 (1)至-18.5 (1)°之间。这些偏差源于空间相互作用。四个Si-C(t-Bu)键几乎是交错的,而另外四个Si-C(t-Bu)键处于交错构象和重叠构象之间。后一种Si-C(t-Bu)键比交错的Si-C(t-Bu)键长约

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