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聚偏氟乙烯-镧锶钴氧(0.5)复合材料:LSCO 颗粒尺寸对结构和介电性能的影响。

Poly(vinylidene fluoride)-La(0.5)Sr(0.5)CoO(3-δ) composites: the influence of LSCO particle size on the structure and dielectric properties.

机构信息

Materials Science and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology, Trivandrum-695 019, Kerala, India.

出版信息

Phys Chem Chem Phys. 2014 Aug 28;16(32):17008-17. doi: 10.1039/c4cp01924e.

Abstract

Dielectric composites composed of poly(vinylidene fluoride) (PVDF) and La0.5Sr0.5CoO3-δ (LSCO) with high permittivity, low loss and high breakdown strength have been developed. The effects of particle size of LSCO (fine (∼250 nm) and coarse (∼3 μm)) on the phase crystallization of PVDF and dielectric properties of polymer-LSCO composites are studied. The inclusion of fine LSCO into PVDF readily favours the formation of polar crystals (β and γ-phases), which makes the composite suitable for both electromechanical and high charge storage embedded capacitor applications. Moreover, the addition of fine LSCO particles also increases the overall crystallization rate as well as the melting point of PVDF. The composite containing fine LSCO particles gave a percolation threshold at about 25 volume percentage, while that with coarse particles did not show any percolation even at very high volume percentage. As a result of fine LSCO particle loading, the composite exhibited a relative permittivity (εr) of ∼600, a conductivity of 2.7 × 10(-7) S cm(-1), a dielectric loss (tan δ) of 0.7 at 1 kHz and a breakdown voltage of 100 V even at 20 volume percentage of a filler, demonstrating promising applications in the embedded capacitors.

摘要

已经开发出了具有高介电常数、低损耗和高击穿强度的由聚偏二氟乙烯(PVDF)和 La0.5Sr0.5CoO3-δ(LSCO)组成的电介质复合材料。研究了 LSCO 颗粒尺寸(细(约 250nm)和粗(约 3μm))对 PVDF 的相结晶和聚合物-LSCO 复合材料介电性能的影响。将细 LSCO 掺入 PVDF 中很容易有利于形成极性晶体(β和γ相),这使得复合材料既适合机电应用,也适合高电荷存储嵌入式电容器应用。此外,细 LSCO 颗粒的添加还提高了 PVDF 的整体结晶速率和熔点。含有细 LSCO 颗粒的复合材料在约 25 体积百分比时出现渗流阈值,而含有粗颗粒的复合材料即使在很高的体积百分比下也没有表现出任何渗流。由于细 LSCO 颗粒的负载,复合材料表现出相对介电常数(εr)约为 600,电导率为 2.7×10(-7) S cm(-1),在 1 kHz 下的介电损耗(tan δ)为 0.7,击穿电压为 100 V,即使在 20 体积百分比的填充剂下,也展示了在嵌入式电容器中的有前景的应用。

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