Sinha Woormileela, Kumar Mohit, Garai Antara, Purohit Chandra Shekhar, Som Tapobrata, Kar Sanjib
School of Chemical Sciences, National Institute of Science Education and Research (NISER), Bhubaneswar - 751005, India.
Dalton Trans. 2014 Sep 7;43(33):12564-73. doi: 10.1039/c4dt01257g.
Three novel tin(iv)corrole complexes have been prepared and characterized by various spectroscopic techniques including single crystal X-ray structural analysis. Packing diagrams of the tin(iv)corroles revealed that corrolato-tin(iv)-chloride molecules are interconnected by intermolecular C-HCl hydrogen bonding interactions. HCl distances are 2.848 Å, 3.051 Å, and 2.915 Å, respectively, for the complexes. In addition, the C-HCl angles are 119.72°, 144.70°, and 147.08°, respectively, for the complexes. It was also observed that in one of the three synthesized complexes dimers were formed, while in the other two cases 1D infinite polymer chains were formed. Well-defined and nicely organized three-dimensional hollow nanospheres (SEM images on silicon wafers) with diameters of ca. 676 nm and 661 nm are obtained in the complexes, forming 1D polymer chains. By applying a thin layer of tin(iv)corrole nanospheres to an ITO surface (AFM height images of ITO films; ∼200 nm in height), a device was fabricated with the following composition: Ag/ITO-coated glass/tin(iv)corrole nanospheres/ITO-coated glass/Ag. The resistivity (ρ) of the nanostructured film was calculated to be ∼2.4 × 10(8) Ω cm, which falls in the range of semi-insulating semiconductors. CAFM current maps at 10 V bias show bright spots with a 10-20 pA intensity and indicate that the nanospheres (∼250 nm in diameter) are the electron-conducting pathway in the device. The semi-insulating behavior arises from the non-facile electron transfer in the HOMOs of the tin(iv)corrole nanospheres.
已制备出三种新型的四价锡卟啉配合物,并通过包括单晶X射线结构分析在内的各种光谱技术对其进行了表征。四价锡卟啉的堆积图显示,氯代四价锡卟啉分子通过分子间C-HCl氢键相互作用相互连接。对于这些配合物,HCl距离分别为2.848 Å、3.051 Å和2.915 Å。此外,这些配合物的C-HCl角分别为119.72°、144.70°和147.08°。还观察到,在三种合成的配合物中,有一种形成了二聚体,而在另外两种情况下形成了一维无限聚合物链。在这些配合物中获得了定义明确且组织良好的三维中空纳米球(硅片上的扫描电子显微镜图像),直径约为676 nm和661 nm,形成一维聚合物链。通过在ITO表面涂覆一层薄的四价锡卟啉纳米球(ITO薄膜的原子力显微镜高度图像;高度约为200 nm),制备了一种具有以下组成的器件:Ag/ITO涂层玻璃/四价锡卟啉纳米球/ITO涂层玻璃/Ag。计算得出纳米结构薄膜的电阻率(ρ)约为2.4×10⁸ Ω·cm,属于半绝缘半导体范围。在10 V偏压下的导电原子力显微镜电流图显示出强度为10 - 20 pA的亮点,表明纳米球(直径约为250 nm)是器件中的电子传导途径。半绝缘行为源于四价锡卟啉纳米球的最高占据分子轨道中电子转移不易发生。