Kang Hosung, Kim Duckjong, Baik Seunghyun
SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Republic of Korea.
Phys Chem Chem Phys. 2014 Sep 21;16(35):18759-64. doi: 10.1039/c4cp02367f.
One-dimensional conductive fillers such as single-walled carbon nanotubes (SWNTs) can be aggregated and aligned during transparent conductive film (TCF) formation by the vacuum filtration method. The potential error of analysing the average sheet resistance of these anisotropic films, using the four-point probe in-line method and the conversion formula developed assuming uniform isotropic material properties, was systematically investigated by finite element analysis and experiments. The finite element analysis of anisotropic stripe-patterned TCFs with alternating low (ρ1) and high (ρ2) resistivities revealed that the estimated average sheet resistance approached ρ1/t when the probes were parallel to the aligned nanotubes. The thickness of the film is t. It was more close to ρ2/t when the probes were perpendicular to the aligned tubes. Indeed, TCFs fabricated by the vacuum filtration method using metal-enriched SWNTs exhibited highly anisotropic local regions where tubes were aggregated and aligned. The local sheet resistances of randomly oriented, aligned, and perpendicular tube regions of the TCF at a transmittance of 89.9% were 5000, 2.4, and 12 300 Ω □(-1), respectively. Resistivities of the aggregated and aligned tube region (ρ1 = 1.2 × 10(-5) Ω cm) and the region between tubes (ρ2 = 6.2 × 10(-2) Ω cm) could be approximated with the aid of finite element analysis. This work demonstrates the potential error of characterizing the average sheet resistance of anisotropic TCFs using the four-point probe in-line method since surprisingly high or low values could be obtained depending on the measurement angle. On the other hand, a better control of aggregation and alignment of nanotubes would realize TCFs with a very small anisotropic resistivity and a high transparency.
一维导电填料,如单壁碳纳米管(SWNTs),在通过真空过滤法形成透明导电膜(TCF)的过程中会发生聚集和排列。利用有限元分析和实验系统地研究了使用四点探针 inline 法以及在假设材料特性均匀各向同性的情况下开发的转换公式来分析这些各向异性薄膜平均薄层电阻时的潜在误差。对具有交替低电阻率(ρ1)和高电阻率(ρ2)的各向异性条纹图案化 TCF 进行有限元分析表明,当探针与排列的纳米管平行时,估计的平均薄层电阻接近 ρ1/t。薄膜的厚度为 t。当探针垂直于排列的纳米管时,该值更接近 ρ2/t。实际上,通过使用富含金属的 SWNTs 的真空过滤法制备的 TCF 表现出高度各向异性的局部区域,其中纳米管发生了聚集和排列。在 89.9% 的透光率下,TCF 的随机取向、排列和垂直于纳米管区域的局部薄层电阻分别为 5000、2.4 和 12300 Ω□(-1)。借助有限元分析可以近似得到聚集和排列的纳米管区域(ρ1 = 1.2×10(-5) Ω cm)和纳米管之间区域(ρ2 = 6.2×10(-2) Ω cm)的电阻率。这项工作证明了使用四点探针 inline 法表征各向异性 TCF 平均薄层电阻时的潜在误差,因为根据测量角度可能会得到出奇高或低的值。另一方面,更好地控制纳米管的聚集和排列将实现具有非常小的各向异性电阻率和高透明度的 TCF。