Izaki Masanobu, Ohta Takayuki, Kondo Misaki, Takahashi Toshiaki, Mohamad Fariza Binti, Zamzuri Mohd, Sasano Junji, Shinagawa Tsutomu, Pauporté Thierry
Graduate School of Engineering, Toyohashi University of Technology , Toyohashi, Aichi 441-8580, Japan.
ACS Appl Mater Interfaces. 2014 Aug 27;6(16):13461-9. doi: 10.1021/am502246j. Epub 2014 Aug 7.
Cl-doped ZnO-nanowire (Cl:ZnO-nws)/Cu2O photovoltaic devices were prepared by electrodeposition in aqueous solutions, and the effects of the insertion of the highly resistive ZnO (i-ZnO) layer has been demonstrated by an improvement of the photovoltaic performance. The Cl:ZnO-nws and i-ZnO layer were prepared by electrodeposition in a zinc chloride aqueous solution with saturated molecular oxygen and simple zinc nitrate aqueous solution, respectively. The i-ZnO layer was directly deposited on the Cl:ZnO-nws and suppressed the electrodeposition of the Cu2O layer on the Cl:ZnO-nws. The insertion of the i-ZnO layer between the Cl:ZnO-nws and Cu2O layers induced an improvement in the photovoltaic performance from 0.40 to 1.26% with a 0.35 V open circuit voltage, 7.1 mA·cm(-2) short circuit current density, and 0.52 fill factor due to the reduction of the recombination loss.
通过在水溶液中进行电沉积制备了掺氯氧化锌纳米线（Cl:ZnO-nws）/氧化亚铜光伏器件，并且通过光伏性能的提高证明了插入高电阻氧化锌（i-ZnO）层的效果。Cl:ZnO-nws和i-ZnO层分别通过在含有饱和分子氧的氯化锌水溶液和简单的硝酸锌水溶液中进行电沉积制备。i-ZnO层直接沉积在Cl:ZnO-nws上，并抑制了氧化亚铜层在Cl:ZnO-nws上的电沉积。在Cl:ZnO-nws和氧化亚铜层之间插入i-ZnO层，由于复合损失的减少，使光伏性能从0.40%提高到1.26%，开路电压为0.35 V，短路电流密度为7.1 mA·cm(-2)，填充因子为0.52。
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