Graduate School of Engineering, Toyohashi University of Technology , Toyohashi, Aichi 441-8580, Japan.
ACS Appl Mater Interfaces. 2013 Oct 9;5(19):9386-95. doi: 10.1021/am403137x. Epub 2013 Sep 23.
We report a hybrid photovoltaic device composed of a 3.3 eV bandgap zinc oxide (ZnO) semiconductor and metal-free phthalocyanine layers and the effects of the insertion of the highly resistive ZnO buffer layer on the electrical characteristics of the rectification feature and photovoltaic performance. The hybrid photovoltaic devices have been constructed by electrodeposition of the 300 nm thick ZnO layer in a simple zinc nitrate aqueous solution followed by vacuum evaporation of 50-400 nm thick-phthalocyanine layers. The ZnO layers with the resistivity of 1.8 × 10(3) and 1 × 10(8) Ω cm were prepared by adjusting the cathodic current density and were installed into the hybrid photovoltaic devices as the n-type and buffer layer, respectively. The phthalocyanine layers with the characteristic monoclinic lattice showed a characteristic optical absorption feature regardless of the thickness, but the preferred orientation changed depending on the thickness. The ZnO buffer-free hybrid 50 nm thick phthalocyanine/n-ZnO photovoltaic device showed a rectification feature but possessed a poor photovoltaic performance with a conversion efficiency of 7.5 × 10(-7) %, open circuit voltage of 0.041 V, and short circuit current density of 8.0 × 10(-5) mA cm(-2). The insertion of the ZnO buffer layer between the n-ZnO and phthalocyanine layers induced improvements in both the rectification feature and photovoltaic performance. The excellent rectification feature with a rectification ratio of 3188 and ideally factor of 1.29 was obtained for the hybrid 200 nm thick phthalocyanine/ZnO buffer/n-ZnO photovoltaic device, and the hybrid photovoltaic device possessed an improved photovoltaic performance with the conversion efficiency of 0.0016%, open circuit voltage of 0.31 V, and short circuit current density of 0.015 mA cm(-2).
我们报告了一种由 3.3 eV 带隙氧化锌 (ZnO) 半导体和无金属酞菁层组成的混合光伏器件，以及插入高电阻 ZnO 缓冲层对整流特性和光伏性能的影响。混合光伏器件是通过在简单的硝酸锌水溶液中电沉积 300nm 厚的 ZnO 层，然后真空蒸发 50-400nm 厚的酞菁层来构建的。通过调整阴极电流密度，制备出电阻率分别为 1.8×10(3)和 1×10(8)Ωcm 的 ZnO 层，并将其分别用作 n 型和缓冲层安装到混合光伏器件中。无论厚度如何，酞菁层都具有特征单斜晶格，显示出特征光学吸收特征，但择优取向取决于厚度。没有 ZnO 缓冲层的混合 50nm 厚酞菁/n-ZnO 光伏器件表现出整流特性，但光伏性能较差，转换效率为 7.5×10(-7) %，开路电压为 0.041V，短路电流密度为 8.0×10(-5)mA cm(-2)。在 n-ZnO 和酞菁层之间插入 ZnO 缓冲层可以提高整流特性和光伏性能。对于混合 200nm 厚酞菁/ZnO 缓冲/n-ZnO 光伏器件，获得了优异的整流特性，整流比为 3188，理想因子为 1.29，混合光伏器件的光伏性能也得到了改善，转换效率为 0.0016%，开路电压为 0.31V，短路电流密度为 0.015mA cm(-2)。
