Institut für Physik & IMN MacroNano@(ZIK), Technische Universität Ilmenau, 98693 Ilmenau (Germany).
Angew Chem Int Ed Engl. 2014 Oct 6;53(41):11027-31. doi: 10.1002/anie.201406044. Epub 2014 Aug 27.
Instead of conventional semiconductor photoelectrodes, herein, we focus on BiFeO3 ferroelectric photoelectrodes to break the limits imposed by common semiconductors. As a result of their prominent ferroelectric properties, the photoelectrodes are able to tune the transfer of photo-excited charges generated either in BiFeO3 or the surface modifiers by manipulating the poling conditions of the ferroelectric domains. At 0 V vs Ag/AgCl, the photocurrent could be switched from 0 μA cm(-2) to 10 μA cm(-2) and the open-circuit potential changes from 33 mV to 440 mV, when the poling bias of pretreatment is manipulated from -8 V to +8 V. Additionally, the pronounced photocurrent from charge injection of the excited surface modifiers could be quenched by switching the poling bias from +8 V to -8 V.
本文聚焦于 BiFeO3 铁电光电 极,以突破常见半导体的限制,而不是传统的半导体光 电 极。由于其显著的铁电性能,光电 极可以通过操 控铁电畴的极化条件来调节在 BiFeO3 或表面修饰剂中产生的光生电荷的转移。在 0 V 相对于 Ag/AgCl 时,通过将预处理的极化偏压从 -8 V 调 控到 +8 V,光电流可以从 0 μA cm(-2)切换到 10 μA cm(-2),开路电 位从 33 mV 变化到 440 mV。此外,通过将极化偏压从 +8 V 切换到 -8 V,可 以猝灭来自激 发表面修饰剂的注入电荷的显著光电流。