Qiu Jian-Hua, Chen Meng-Jiao, Zhao Tian-Xiang, Chen Zhi-Hui, Yuan Ning-Yi, Ding Jian-Ning
School of Mechanical Engineering, Jiangsu University, Zhenjiang, 212013, Jiangsu, China.
School of Mathematics and Physics, Jiangsu Province Cultivation Base for State Key Laboratory of Photovoltaic Science and Technology, Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou University, Changzhou 213164, Jiangsu, China.
J Nanosci Nanotechnol. 2020 Apr 1;20(4):2617-2621. doi: 10.1166/jnn.2020.17217.
Pure phase polycrystalline BiFeO₃ film was deposited onto FTO substrate by RF magnetron sputtering method. SEM result shows that BiFeO₃ film has the obvious porosity and large clusters which lead to the poor ferroelectric and photovoltaic properties in FTO/BiFeO₃/Ag device. However, these properties are improved in structured FTO/TiO₂/BiFeO₃/HTM/Ag device by incorporating the electron and hole transport materials. The hysteresis loop measurement demonstrates the excellent ferroelectric property with large remnant polarization (2 = 180 C/cm²) and low leakage current. The curve shows the short-circuit current density is dozens of times larger than that of FTO/BiFeO₃/Ag device. Moreover, the photovoltaic output depends on the poling field where the positive poling improves the short-circuit current density to -85 A/cm₂ and the negative poling reduces both the photocurrent and photovoltage. It is believed that the ferroelectric polarization plays a dominant role in the photovoltaic effect.
通过射频磁控溅射法在FTO衬底上沉积了纯相多晶BiFeO₃薄膜。扫描电子显微镜结果表明，BiFeO₃薄膜具有明显的孔隙率和大的团聚体，这导致FTO/BiFeO₃/Ag器件的铁电和光伏性能较差。然而，通过引入电子和空穴传输材料，在结构化的FTO/TiO₂/BiFeO₃/HTM/Ag器件中这些性能得到了改善。磁滞回线测量表明该器件具有优异的铁电性能，剩余极化强度大（2 = 180 C/cm²）且漏电流低。曲线显示短路电流密度比FTO/BiFeO₃/Ag器件大几十倍。此外，光伏输出取决于极化场，正向极化将短路电流密度提高到-85 A/cm²，而负向极化则降低光电流和光电压。据信铁电极化在光伏效应中起主导作用。
