Hu Weida, Ye Zhenhua, Liao Lei, Chen Honglei, Chen Lu, Ding Ruijun, He Li, Chen Xiaoshuang, Lu Wei
Opt Lett. 2014 Sep 1;39(17):5184-7. doi: 10.1364/OL.39.005184.
High temporal and spatial coherent simultaneous long-wavelength/mid-wavelength (LW/MW) two-color focal plane array (FPA) infrared detection is the cutting-edge technique for third-generation infrared remote sensing. In this Letter, HgCdTe LW/MW two-color infrared detectors were designed and fabricated. The top long-wavelength and bottom mid-wavelength infrared planar photodiodes were processed by selective B(+)-implantation after etching the long-wavelength epilayer into a curvature and exposing the mid-wavelength layers for the implantation of the n region of the MW photodiode by a micro-mesa array technique. A 128×128 MW/LW HgCdTe infrared FPA detector is fabricated photo-lithographically by simultaneous nonplanar B(+)-implantation of the LW and MW photodiodes, passivation and metallization of the sidewalls, mesa isolation, and flip-chip hybridization with a read-out integrated circuit. The inner mechanisms for suppressing the cross talk and improving photoresponse have been carried out by combining experimental work with numerical simulations.
高时间和空间相干的同时长波/中波（LW/MW）双色焦平面阵列（FPA）红外探测是第三代红外遥感的前沿技术。在本信函中，设计并制作了HgCdTe LW/MW双色红外探测器。通过将长波长外延层蚀刻成曲率形状并暴露中波长层，采用微台面阵列技术对MW光电二极管的n区进行注入，之后通过选择性B(+)注入来处理顶部的长波长和底部的中波长红外平面光电二极管。通过对LW和MW光电二极管同时进行非平面B(+)注入、侧壁钝化和金属化、台面隔离以及与读出集成电路进行倒装芯片杂交，光刻制造出了128×128的MW/LW HgCdTe红外FPA探测器。通过将实验工作与数值模拟相结合，开展了抑制串扰和改善光响应的内部机制研究。
