Moriya Rai, Sawano Kentarou, Hoshi Yusuke, Masubuchi Satoru, Shiraki Yasuhiro, Wild Andreas, Neumann Christian, Abstreiter Gerhard, Bougeard Dominique, Koga Takaaki, Machida Tomoki
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan.
Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan.
Phys Rev Lett. 2014 Aug 22;113(8):086601. doi: 10.1103/PhysRevLett.113.086601. Epub 2014 Aug 21.
The spin-orbit interaction (SOI) of a two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observe weak antilocalization (WAL) in the magnetoconductivity measurement, revealing that the WAL feature can be fully described by the k-cubic Rashba SOI theory. Furthermore, we demonstrate electric field control of the Rashba SOI. Our findings reveal that the heavy hole (HH) in strained Ge is a purely cubic Rashba system, which is consistent with the spin angular momentum m(j) = ± 3/2 nature of the HH wave function.
在应变锗/硅锗量子阱结构中研究了二维空穴气在具有反演对称性的半导体锗中的自旋轨道相互作用（SOI）。我们在磁导率测量中观察到弱反局域化（WAL），这表明WAL特征可以用k立方 Rashba SOI理论完全描述。此外，我们展示了对Rashba SOI的电场控制。我们的研究结果表明，应变锗中的重空穴（HH）是一个纯立方Rashba系统，这与HH波函数的自旋角动量m(j) = ± 3/2性质一致。
