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采用分子层沉积技术生长和研究 Hf 硅石和 HfO<sub>2</sub>/Hf 硅石纳米层状和合金薄膜的性能

Growth and properties of hafnicone and HfO(2)/hafnicone nanolaminate and alloy films using molecular layer deposition techniques.

机构信息

Department of Chemistry and Biochemistry, ‡Department of Mechanical Engineering, University of Colorado , Boulder, Colorado 80309-0215, United States.

出版信息

ACS Appl Mater Interfaces. 2014 Oct 8;6(19):16880-7. doi: 10.1021/am504341r. Epub 2014 Sep 25.

Abstract

Molecular layer deposition (MLD) of the hafnium alkoxide polymer known as "hafnicone" was grown using sequential exposures of tetrakis(dimethylamido) hafnium (TDMAH) and ethylene glycol (EG) as the reactants. In situ quartz crystal microbalance (QCM) experiments demonstrated self-limiting reactions and linear growth versus the number of TDMAH/EG reaction cycles. Ex situ X-ray reflectivity (XRR) analysis confirmed linear growth and measured the density of the hafnicone films. The hafnicone growth rates were temperature-dependent and decreased from 1.2 Å per cycle at 105 °C to 0.4 Å per cycle at 205 °C. The measured density was ∼3.0 g/cm(3) for the hafnicone films at all temperatures. Transmission electron microscopy images revealed very uniform and conformal hafnicone films. The XRR studies also showed that the hafnicone films were very stable with time. Nanoindentation measurements determined that the elastic modulus and hardness of the hafnicone films were 47 ± 2 and 2.6 ± 0.2 GPa, respectively. HfO2/hafnicone nanolaminate films also were fabricated using HfO2 atomic layer deposition (ALD) and hafnicone MLD at 145 °C. The in situ QCM measurements revealed that HfO2 ALD nucleation on the hafnicone MLD surface required at least 18 TDMAH/H2O cycles. Hafnicone alloys were also fabricated by combining HfO2 ALD and hafnicone MLD at 145 °C. The composition of the hafnicone alloy was varied by adjusting the relative number of TDMAH/H2O ALD cycles and TDMAH/EG MLD cycles in the reaction sequence. The electron density changed continuously from 8.2 × 10(23) e(-)/cm(3) for pure hafnicone MLD films to 2.4 × 10(24) e(-)/cm(3) for pure HfO2 ALD films. These hafnicone films and the HfO2/hafnicone nanolaminates and alloys may be useful for flexible thin-film devices.

摘要

采用四甲基氢氧化铵(TDMAH)和乙二醇(EG)作为反应物,通过顺序暴露来生长称为“hafnicone”的氧化铪烷氧基聚合物的分子层沉积(MLD)。原位石英晶体微天平(QCM)实验证明了自限制反应和与 TDMAH/EG 反应循环数的线性增长。非原位 X 射线反射率(XRR)分析证实了线性生长并测量了 hafnicone 薄膜的密度。hafnicone 生长速率随温度而变化,从 105°C 时的每循环 1.2 Å 降低到 205°C 时的每循环 0.4 Å。在所有温度下,测量的 hafnicone 薄膜密度约为 3.0 g/cm(3)。透射电子显微镜图像显示了非常均匀和共形的 hafnicone 薄膜。XRR 研究还表明,hafnicone 薄膜随时间非常稳定。纳米压痕测量确定 hafnicone 薄膜的弹性模量和硬度分别为 47 ± 2 和 2.6 ± 0.2 GPa。还使用 HfO2 原子层沉积(ALD)和 145°C 时的 hafnicone MLD 来制造 HfO2/hafnicone 纳米层压板。原位 QCM 测量表明,HfO2 ALD 在 hafnicone MLD 表面的成核至少需要 18 个 TDMAH/H2O 循环。还通过在 145°C 时组合 HfO2 ALD 和 hafnicone MLD 来制造 hafnicone 合金。通过调整反应序列中 TDMAH/H2O ALD 循环和 TDMAH/EG MLD 循环的相对数量来改变 hafnicone 合金的组成。电子密度从纯 hafnicone MLD 薄膜的 8.2×10(23)e(-)/cm(3)连续变化到纯 HfO2 ALD 薄膜的 2.4×10(24)e(-)/cm(3)。这些 hafnicone 薄膜以及 HfO2/hafnicone 纳米层压板和合金可能对柔性薄膜器件有用。

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