Calloni A, Berti G, Brambilla A, Riva M, Picone A, Bussetti G, Finazzi M, Ciccacci F, Duò L
J Phys Condens Matter. 2014 Nov 5;26(44):445001. doi: 10.1088/0953-8984/26/44/445001. Epub 2014 Sep 12.
We investigated the room temperature oxidation of ultra-thin Ni and Cr films grown on Fe(0 0 1). In particular, we characterized the degree of crystallinity and the stoichiometry of the oxide layers and addressed the chemical stability of the interface with the highly reactive Fe substrate by means of low-energy electron diffraction and x-ray and UV photoemission spectroscopy. In the Ni case we detected, upon oxidation, the formation of a Fe(3)O(4) layer covering the Ni oxide, due to the diffusion of Fe cations towards the surface. At high temperature and in ultra-high vacuum conditions, the Ni oxide dissolved and the Fe oxide layer was reduced to FeO. In the Cr case, we observed the formation of a thin Cr(2)O(3) oxide layer, showing a diffraction pattern compatible with a defective γ-Cr(2)O(3) phase. A thicker Cr oxide layer could be produced by oxidizing the sample at 300 °C, at the expense of the incorporation of trace amounts of Fe cations.
我们研究了生长在Fe(0 0 1)上的超薄镍和铬薄膜在室温下的氧化情况。特别地,我们表征了氧化层的结晶度和化学计量比,并通过低能电子衍射、X射线和紫外光电子能谱研究了与高活性铁衬底界面的化学稳定性。在镍的情况中,我们检测到,氧化时由于铁阳离子向表面扩散,形成了覆盖氧化镍的Fe(3)O(4)层。在高温和超高真空条件下,氧化镍溶解,氧化铁层被还原为FeO。在铬的情况中,我们观察到形成了一层薄的Cr(2)O(3)氧化层,其衍射图案与有缺陷的γ-Cr(2)O(3)相相符。通过在300°C氧化样品可以生成更厚的氧化铬层,但代价是会掺入痕量的铁阳离子。