Mette Gerson, Reutzel Marcel, Bartholomäus Ruben, Laref Slimane, Tonner Ralf, Dürr Michael, Koert Ulrich, Höfer Ulrich
Fachbereich Physik und Zentrum für Materialwissenschaften, Philipps-Universität, 35032 Marburg (Germany); Current address: Physik-Institut, Universität Zürich, CH-8057 Zürich (Switzerland).
Chemphyschem. 2014 Dec 1;15(17):3725-8. doi: 10.1002/cphc.201402486. Epub 2014 Sep 22.
The reaction of tetrahydrofuran (THF), an otherwise inert solvent molecule, on Si(001) was experimentally studied in ultra-high vacuum. Using scanning tunneling microscopy (STM) and photoelectron spectroscopy at variable temperature, we could both isolate a datively bound intermediate state of THF on Si(001), as well as the final configuration that bridges two dimer rows of the Si(001) surface after ether cleavage. The latter configuration implies splitting of the OC bond, which is typically kinetically suppressed. THF thus exhibits a hitherto unknown reactivity on Si(001).
在超高真空中对四氢呋喃（THF，一种原本惰性的溶剂分子）与Si(001)的反应进行了实验研究。通过可变温度下的扫描隧道显微镜（STM）和光电子能谱，我们既分离出了THF在Si(001)上的配位键合中间态，也得到了醚键断裂后连接Si(001)表面两个二聚体行的最终构型。后一种构型意味着OC键的断裂，而这通常在动力学上受到抑制。因此，THF在Si(001)上表现出一种迄今未知的反应活性。
