Samuvel K, Ramachandran K
Department of Physics, Faculty of Engineering and Technology, Vadapalani Campus, SRM University, Chennai 600026, Tamil Nadu, India.
Department of Physics, Faculty of Engineering and Technology, Vadapalani Campus, SRM University, Chennai 600026, Tamil Nadu, India.
Spectrochim Acta A Mol Biomol Spectrosc. 2015 Feb 5;136 Pt B:437-42. doi: 10.1016/j.saa.2014.09.054. Epub 2014 Sep 28.
A comparative study of the surface morphology, dielectric and magnetic properties of the BaTi0.5Fe0.5O3 (BTFO) ceramics materials. This has been carried out by synthesizing the samples in different routes. BTFO samples have shown single phased 12R type hexagonal structure with R3m, P4mm space group. Interfacial effects on the dielectric properties of the samples have been understood by Cole-Cole plots in complex impedance and modulus formalism. It has been identified that huge dielectric constant (10(3)-10(6)) at lower frequencies is largely contributed by the heterogeneous electronic microstructure at the interfaces of grains. Modulus formalism has identified the effects of both grain and grain boundary microstructure on the dielectric properties, particularly in chemical routed samples. The order of grain boundary resistivity suggests the semiconductor/insulator class of the material. The grain boundary resistivity of the mechanical alloyed samples is remarkably lower than the solid state and chemical routed samples. Few samples have of the samples have exhibited signature of ferromagnetism at the room temperature.
BaTi0.5Fe0.5O3（BTFO）陶瓷材料的表面形态、介电和磁性的比较研究。这是通过不同途径合成样品来进行的。BTFO样品呈现出具有R3m、P4mm空间群的单相12R型六方结构。通过复阻抗和模量形式的Cole-Cole图，了解了界面效应对样品介电性能的影响。已经确定，低频下巨大的介电常数（10³-10⁶）在很大程度上是由晶粒界面处的异质电子微观结构造成的。模量形式确定了晶粒和晶界微观结构对介电性能的影响，特别是在化学合成的样品中。晶界电阻率的顺序表明了该材料的半导体/绝缘体类别。机械合金化样品的晶界电阻率明显低于固态和化学合成样品。少数样品在室温下表现出铁磁性特征。
