通过化学气相沉积法生长的单层二硫化钼和二硒化钨的超快瞬态太赫兹电导率
Ultrafast transient terahertz conductivity of monolayer MoS₂ and WSe₂ grown by chemical vapor deposition.
作者信息
Docherty Callum J, Parkinson Patrick, Joyce Hannah J, Chiu Ming-Hui, Chen Chang-Hsiao, Lee Ming-Yang, Li Lain-Jong, Herz Laura M, Johnston Michael B
机构信息
Department of Physics, University of Oxford , Clarendon Laboratory, Parks Road, Oxford OX1 3PU, U.K.
出版信息
ACS Nano. 2014 Nov 25;8(11):11147-53. doi: 10.1021/nn5034746. Epub 2014 Nov 4.
We have measured ultrafast charge carrier dynamics in monolayers and trilayers of the transition metal dichalcogenides MoS2 and WSe2 using a combination of time-resolved photoluminescence and terahertz spectroscopy. We recorded a photoconductivity and photoluminescence response time of just 350 fs from CVD-grown monolayer MoS2, and 1 ps from trilayer MoS2 and monolayer WSe2. Our results indicate the potential of these materials as high-speed optoelectronic materials.
我们结合时间分辨光致发光和太赫兹光谱，测量了过渡金属二硫属化物MoS₂和WSe₂单层及三层中的超快电荷载流子动力学。我们记录到，化学气相沉积生长的单层MoS₂的光电导率和光致发光响应时间仅为350飞秒，三层MoS₂和单层WSe₂的则为1皮秒。我们的结果表明了这些材料作为高速光电子材料的潜力。
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