用于双向光通信的氮化物发光二极管和光电探测器的单片集成。

Monolithic integration of nitride light emitting diodes and photodetectors for bi-directional optical communication.

作者信息

Jiang Zhenyu, Atalla Mahmoud R M, You Guanjun, Wang Li, Li Xiaoyun, Liu Jie, Elahi Asim M, Wei Lai, Xu Jian

出版信息

Opt Lett. 2014 Oct 1;39(19):5657-60. doi: 10.1364/OL.39.005657.

DOI:10.1364/OL.39.005657

Abstract

Design and fabrication of monolithically integrated III-nitride visible light-emitting-diodes (LEDs) and ultraviolet Schottky barrier-photodetectors (SB-PDs) have been proposed and demonstrated. Responsivity up to 0.2 AW(-1) at 365 nm for GaN SB-PDs has been achieved. It is shown that those UV SB-PDs were capable of sensitive UV light detection down to 7.16×10(-4) W/cm2 at 365 nm, whereas simultaneous operation of on-chip blue LEDs has produced negligible crosstalk at practical illumination brightness. Monolithically integrated LEDs and SB-PDs can function as transmitters to emit visible light signals, and as receivers to analyze incoming UV signals, respectively; this offers the potential of using such devices for bi-directional optical wireless communication applications.

摘要

已经提出并展示了单片集成的III族氮化物可见光发光二极管（LED）和紫外肖特基势垒光电探测器（SB-PD）的设计与制造。对于GaN SB-PD，在365 nm处实现了高达0.2 A/W的响应度。结果表明，那些紫外SB-PD能够在365 nm处检测低至7.16×10⁻⁴ W/cm²的灵敏紫外光，而片上蓝色LED的同时运行在实际照明亮度下产生的串扰可忽略不计。单片集成的LED和SB-PD可分别用作发射可见光信号的发射器和分析入射紫外信号的接收器；这为将此类器件用于双向光无线通信应用提供了潜力。